| 2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022 | 377 | 2022 |
| Bio-inspired stochastic computing using binary CBRAM synapses M Suri, D Querlioz, O Bichler, G Palma, E Vianello, D Vuillaume, ... IEEE Transactions on Electron Devices 60 (7), 2402-2409, 2013 | 269 | 2013 |
| Spiking neural networks hardware implementations and challenges: A survey M Bouvier, A Valentian, T Mesquida, F Rummens, M Reyboz, E Vianello, ... ACM Journal on Emerging Technologies in Computing Systems (JETC) 15 (2), 1-35, 2019 | 245 | 2019 |
| HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ... IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015 | 225 | 2015 |
| Prototype ATLAS IBL modules using the FE-I4A front-end readout chip Atlas Ibl Collaboration Journal of Instrumentation 7 (11), P11010, 2012 | 206 | 2012 |
| CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications M Suri, O Bichler, D Querlioz, G Palma, E Vianello, D Vuillaume, ... 2012 International Electron Devices Meeting, 10.3. 1-10.3. 4, 2012 | 173 | 2012 |
| 3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade C Da Via, M Boscardin, GF Dalla Betta, G Darbo, C Fleta, C Gemme, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2012 | 157 | 2012 |
| In situ learning using intrinsic memristor variability via Markov chain Monte Carlo sampling T Dalgaty, N Castellani, C Turck, KE Harabi, D Querlioz, E Vianello Nature Electronics 4 (2), 151-161, 2021 | 143 | 2021 |
| Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016 | 125 | 2016 |
| Resistive memories for ultra-low-power embedded computing design E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanovic, D Garbin, ... 2014 IEEE International Electron Devices Meeting 6, 1-6.3, 2014 | 108 | 2014 |
| Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ... Journal of Electroceramics 39, 21-38, 2017 | 101 | 2017 |
| HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations B Traoré, P Blaise, E Vianello, L Perniola, B De Salvo, Y Nishi IEEE Transactions on Electron Devices 63 (1), 360-368, 2015 | 98 | 2015 |
| In-memory and error-immune differential RRAM implementation of binarized deep neural networks M Bocquet, T Hirztlin, JO Klein, E Nowak, E Vianello, JM Portal, ... 2018 IEEE International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2018 | 88 | 2018 |
| Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ... 2014 IEEE international electron devices meeting, 28.4. 1-28.4. 4, 2014 | 88 | 2014 |
| 3D Sequential Integration: Application-driven technological achievements and guidelines P Batude, L Brunet, C Fenouillet-Beranger, F Andrieu, JP Colinge, ... 2017 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2017 | 87 | 2017 |
| On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying B Traoré, P Blaise, E Vianello, H Grampeix, S Jeannot, L Perniola, ... IEEE Transactions on Electron Devices 62 (12), 4029-4036, 2015 | 85 | 2015 |
| Experimental investigation of 4-kb RRAM arrays programming conditions suitable for TCAM A Grossi, E Vianello, C Zambelli, P Royer, JP Noel, B Giraud, L Perniola, ... IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (12 …, 2018 | 73 | 2018 |
| Grain boundary composition and conduction in HfO2: An ab initio study KH Xue, P Blaise, LRC Fonseca, G Molas, E Vianello, B Traoré, ... Applied Physics Letters 102 (20), 2013 | 71 | 2013 |
| Slim edges in double-sided silicon 3D detectors M Povoli, A Bagolini, M Boscardin, GF Dalla Betta, G Giacomini, ... Journal of Instrumentation 7 (01), C01015, 2012 | 69 | 2012 |
| Digital biologically plausible implementation of binarized neural networks with differential hafnium oxide resistive memory arrays T Hirtzlin, M Bocquet, B Penkovsky, JO Klein, E Nowak, E Vianello, ... Frontiers in neuroscience 13, 1383, 2020 | 68 | 2020 |
Damien QuerliozResearch Scientist, CNRS, Université Paris-Saclay在 u-psud.fr 的电子邮件经过验证
