Strong Rashba-Edelstein effect-induced spin–orbit torques in monolayer transition metal dichalcogenide/ferromagnet bilayers Q Shao, G Yu, YW Lan, Y Shi, MY Li, C Zheng, X Zhu, LJ Li, PK Amiri, ... Nano letters 16 (12), 7514-7520, 2016 | 317 | 2016 |
Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics J Qi, YW Lan, AZ Stieg, JH Chen, YL Zhong, LJ Li, CD Chen, Y Zhang, ... Nature communications 6 (1), 7430, 2015 | 293 | 2015 |
Biosorption of Zn (II) and Cu (II) by the indigenous Thiobacillus thiooxidans HL Liu, BY Chen, YW Lan, YC Cheng Chemical Engineering Journal 97 (2-3), 195-201, 2004 | 237 | 2004 |
Optimal production of sulphuric acid by Thiobacillus thiooxidans using response surface methodology HL Liu, YW Lan, YC Cheng Process Biochemistry 39 (12), 1953-1961, 2004 | 191 | 2004 |
Nitrogen‐doped tungsten oxide nanowires: low‐temperature synthesis on Si, and electrical, optical, and field‐emission properties MT Chang, LJ Chou, YL Chueh, YC Lee, CH Hsieh, CD Chen, YW Lan, ... small 3 (4), 658-664, 2007 | 127 | 2007 |
p-Type α-Fe2O3 nanowires and their n-type transition in a reductive ambient YC Lee, YL Chueh, CH Hsieh, MT Chang, LJ Chou, ZL Wang, YW Lan, ... Small 3 (8), 1356-1361, 2007 | 121 | 2007 |
Wafer-Scale Growth of WSe2 Monolayers Toward Phase-Engineered Hybrid WOx/WSe2 Films with Sub-ppb NOx Gas Sensing by a Low-Temperature Plasma … H Medina, JG Li, TY Su, YW Lan, SH Lee, CW Chen, YZ Chen, ... Chemistry of Materials 29 (4), 1587-1598, 2017 | 116 | 2017 |
High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors CM Torres Jr, YW Lan, C Zeng, JH Chen, X Kou, A Navabi, J Tang, ... Nano letters 15 (12), 7905-7912, 2015 | 59 | 2015 |
SEM and AFM images of pyrite surfaces after bioleaching by the indigenous Thiobacillus thiooxidans HL Liu, BY Chen, YW Lan, YC Cheng Applied microbiology and biotechnology 62, 414-420, 2003 | 57 | 2003 |
Atomic-monolayer two-dimensional lateral quasi-heterojunction bipolar transistors with resonant tunneling phenomenon CY Lin, X Zhu, SH Tsai, SP Tsai, S Lei, Y Shi, LJ Li, SJ Huang, WF Wu, ... ACS nano 11 (11), 11015-11023, 2017 | 52 | 2017 |
Atomic-monolayer MoS2 band-to-band tunneling field-effect transistor YW Lan, CM Torres, SH Tsai, X Zhu, Y Shi, MY Li, LJ Li, WK Yeh, ... Small 12 (41), 5676-5683, 2016 | 52 | 2016 |
Resonant Tunneling through Discrete Quantum States in Stacked Atomic-Layered MoS2 LN Nguyen, YW Lan, JH Chen, TR Chang, YL Zhong, HT Jeng, LJ Li, ... Nano letters 14 (5), 2381-2386, 2014 | 49 | 2014 |
Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays YC Huang, PY Chen, KF Huang, TC Chuang, HH Lin, TS Chin, RS Liu, ... NPG Asia Materials 6 (2), e85-e85, 2014 | 46 | 2014 |
Scalable fabrication of a complementary logic inverter based on MoS 2 fin-shaped field effect transistors YW Lan, PC Chen, YY Lin, MY Li, LJ Li, YL Tu, FL Yang, MC Chen, KS Li Nanoscale Horizons 4 (3), 683-688, 2019 | 36 | 2019 |
Anomalous lattice vibrations of CVD-grown monolayer MoS 2 probed using linear polarized excitation light F Li, TD Huang, YW Lan, TH Lu, T Shen, KB Simbulan, J Qi Nanoscale 11 (29), 13725-13730, 2019 | 30 | 2019 |
Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS2 by Twisted Light KB Simbulan, TD Huang, GH Peng, F Li, OJ Gomez Sanchez, JD Lin, ... ACS nano 15 (2), 3481-3489, 2021 | 24 | 2021 |
Control of trion-to-exciton conversion in monolayer WS2 by orbital angular momentum of light R Kesarwani, KB Simbulan, TD Huang, YF Chiang, NC Yeh, YW Lan, ... Science Advances 8 (13), eabm0100, 2022 | 23 | 2022 |
Local modulation of electrical transport in 2D layered materials induced by electron beam irradiation CP Lin, PC Chen, JH Huang, CT Lin, D Wang, WT Lin, CC Cheng, CJ Su, ... ACS Applied Electronic Materials 1 (5), 684-691, 2019 | 21 | 2019 |
Effect of focused ion beam deposition induced contamination on the transport properties of nano devices YW Lan, WH Chang, YC Chang, CS Chang, CD Chen Nanotechnology 26 (5), 055705, 2015 | 19 | 2015 |
Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET SX Guan, TH Yang, CH Yang, CJ Hong, BW Liang, KB Simbulan, ... npj 2D Materials and Applications 7 (1), 9, 2023 | 18 | 2023 |