| Progress on germanium–tin nanoscale alloys J Doherty, S Biswas, E Galluccio, CA Broderick, A Garcia-Gil, R Duffy, ... Chemistry of Materials 32 (11), 4383-4408, 2020 | 52 | 2020 |
| Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge1-xSnx (x = 0.03–0.09) Nanowire Devices E Galluccio, J Doherty, S Biswas, JD Holmes, R Duffy ACS Applied Electronic Materials 2 (5), 1226-1234, 2020 | 15 | 2020 |
| Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0. 92Sn0. 08 E Galluccio, N Petkov, G Mirabelli, J Doherty, SY Lin, FL Lu, CW Liu, ... Thin Solid Films 690, 137568, 2019 | 14 | 2019 |
| Cell formation in stanogermanides using pulsed laser thermal anneal on Ge0. 91Sn0. 09 E Galluccio, G Mirabelli, A Harvey, M Conroy, E Napolitani, R Duffy Materials Science in Semiconductor Processing 121, 105399, 2021 | 13 | 2021 |
| Ex-situ n-type heavy doping of Ge1-xSnx epilayers by surface Sb deposition and pulsed laser melting D Fontana, F Sgarbossa, R Milazzo, E Di Russo, E Galluccio, ... Applied Surface Science 600, 154112, 2022 | 8 | 2022 |
| Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors S Biswas, J Doherty, E Galluccio, HG Manning, M Conroy, R Duffy, ... ACS Applied Nano Materials 4 (2), 1048-1056, 2021 | 4 | 2021 |
| AsH3 gas-phase ex situ doping 3D silicon structures R Duffy, K Thomas, E Galluccio, G Mirabelli, M Sultan, N Kennedy, ... Journal of Applied Physics 124 (4), 2018 | 4 | 2018 |
| Doping considerations for finfet, gate-all-around, and nanosheet based devices R Duffy, F Meaney, E Galluccio ECS Transactions 97 (3), 63, 2020 | 3 | 2020 |
| Ni, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08 E Galluccio, N Petkov, G Mirabelli, J Doherty, SV Lin, FL Lu, CW Liu, ... 2019 Joint International EUROSOI Workshop and International Conference on …, 2019 | 1 | 2019 |
| Monolayer doping and other strategies in high surface-to-volume ratio silicon devices R Duffy, N Kennedy, G Mirabelli, E Galluccio, PK Hurley, JD Holmes, ... 2018 18th International Workshop on Junction Technology (IWJT), 1-6, 2018 | 1 | 2018 |
| GeSn semiconductor for micro-nanoelectronic applications E Galluccio University College Cork, 2020 | | 2020 |
| Silicon Carbide DTL, TTL and ECL Bipolar Integrated Circuits for High Temperature Computing E Galluccio | | 2015 |
Ray DuffyTyndall National Institute, University College Cork在 tyndall.ie 的电子邮件经过验证
