| Sequential infiltration synthesis apparatus IJ Raaijmakers, JW Maes, W Knaepen, KK Kachel US Patent 11,581,186, 2023 | 390 | 2023 |
| Method of forming a structure on a substrate W Knaepen, JW Maes, B Jongbloed, KK Kachel, D Pierreux, DK De Roest US Patent 9,916,980, 2018 | 388 | 2018 |
| Sequential infiltration synthesis apparatus and a method of forming a patterned structure JW Maes, W Knaepen, KK Kachel, DK De Roest, B Jongbloed, D Pierreux US Patent 11,447,861, 2022 | 383 | 2022 |
| Method of forming an enhanced unexposed photoresist layer JW Maes, KK Kachel, DK De Roest US Patent 11,022,879, 2021 | 339 | 2021 |
| Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same K Kachel, D De Roest US Patent 10,928,731, 2021 | 328 | 2021 |
| Infiltration apparatus and methods of infiltrating an infiltrateable material KK Kachel, E Färm US Patent App. 15/996,286, 2019 | 313 | 2019 |
| Semiconductor processing apparatus DK De Roest, W Knaepen, K Kachel US Patent App. 16/468,258, 2020 | 304 | 2020 |
| Method of forming an enhanced unexposed photoresist layer JW Maes, KK Kachel, DK De Roest US Patent App. 17/231,299, 2021 | 196 | 2021 |
| Selective deposition of aluminum and nitrogen containing material H Wang, Q Xie, D Longrie, JW Maes, D De Roest, J Hsieh, C Zhu, ... US Patent 10,121,699, 2018 | 70 | 2018 |
| Deposition of organic films EE Tois, H Suemori, VJ Pore, SP Haukka, V Sharma, JW Maes, D Longrie, ... US Patent 10,453,701, 2019 | 58 | 2019 |
| A new approach to free-standing GaN using β-Ga 2 O 3 as a substrate K Kachel, M Korytov, D Gogova, Z Galazka, M Albrecht, R Zwierz, D Siche, ... CrystEngComm 14 (24), 8536-8540, 2012 | 54 | 2012 |
| Deposition of organic films EE Tois, H Suemori, VJ Pore, SP Haukka, V Sharma, JW Maes, D Longrie, ... US Patent 10,923,361, 2021 | 32 | 2021 |
| FTIR exhaust gas analysis of GaN pseudo-halide vapor phase growth K Kachel, D Siche, S Golka, P Sennikov, M Bickermann Materials Chemistry and Physics 177, 12-18, 2016 | 11 | 2016 |
| Selective deposition of aluminum and nitrogen containing material H Wang, Q Xie, D Longrie, JW Maes, D De Roest, J Hsieh, C Zhu, ... US Patent 10,553,482, 2020 | 9 | 2020 |
| Selective deposition of aluminum and nitrogen containing material H Wang, Q Xie, D Longrie, JW Maes, D De Roest, J Hsieh, C Zhu, ... US Patent 10,903,113, 2021 | 7 | 2021 |
| Sequential infiltration synthesis for line edge roughness mitigation of EUV resist M Baryshnikova, D De Simone, W Knaepen, K Kachel, C BT, S Paolillo, ... Journal of Photopolymer Science and Technology 30 (6), 667-670, 2017 | 7 | 2017 |
| Deposition of organic films EE Tois, H Suemori, VJ Pore, SP Haukka, V Sharma, JW Maes, D Longrie, ... US Patent 11,728,175, 2023 | 5 | 2023 |
| Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy D Siche, R Zwierz, K Kachel, N Jankowski, C Nenstiel, G Callsen, ... Crystal Research and Technology 52 (8), 1600364, 2017 | 5 | 2017 |
| The role of NH3 and hydrocarbon mixtures in GaN pseudo-halide CVD: a quantum chemical study OB Gadzhiev, PG Sennikov, AI Petrov, K Kachel, S Golka, D Gogova, ... Journal of molecular modeling 20, 1-12, 2014 | 5 | 2014 |
| Pseudo halide vapor phase epitaxy growth of GaN crystals KK Kachel Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2015 | 1 | 2015 |
