Carrier concentration dependence of band gap shift in n-type ZnO: Al films JG Lu, S Fujita, T Kawaharamura, H Nishinaka, Y Kamada, T Ohshima, ... Journal of Applied Physics 101 (8), 2007 | 523 | 2007 |
ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition JG Lu, T Kawaharamura, H Nishinaka, Y Kamada, T Ohshima, S Fujita Journal of Crystal Growth 299 (1), 1-10, 2007 | 215 | 2007 |
Successful growth of conductive highly crystalline Sn-doped α-Ga2O3 thin films by fine-channel mist chemical vapor deposition T Kawaharamura, GT Dang, M Furuta Japanese Journal of Applied Physics 51 (4R), 040207, 2012 | 175 | 2012 |
Growth of crystalline zinc oxide thin films by fine-channel-mist chemical vapor deposition T Kawaharamura, H Nishinaka, S Fujita Japanese Journal of Applied Physics 47 (6R), 4669, 2008 | 139 | 2008 |
Carrier concentration induced band-gap shift in Al-doped Zn1− xMgxO thin films JG Lu, S Fujita, T Kawaharamura, H Nishinaka, Y Kamada, T Ohshima Applied physics letters 89 (26), 2006 | 131 | 2006 |
Physics on development of open-air atmospheric pressure thin film fabrication technique using mist droplets: Control of precursor flow T Kawaharamura Japanese Journal of Applied Physics 53 (5S1), 05FF08, 2014 | 126 | 2014 |
Mist-CVD Grown Sn-Doped-Ga2O3MESFETs GT Dang, T Kawaharamura, M Furuta, MW Allen IEEE Transactions on Electron Devices 62 (11), 3640-3644, 2015 | 112 | 2015 |
Second order optical effects in Au nanoparticle-deposited ZnO nanocrystallite films K Ozga, T Kawaharamura, AA Umar, M Oyama, K Nouneh, A Slezak, ... Nanotechnology 19 (18), 185709, 2008 | 110 | 2008 |
Linear-source ultrasonic spray chemical vapor deposition method for fabrication of ZnMgO films and ultraviolet photodetectors Y Kamada, T Kawaharamura, H Nishinaka, S Fujita Japanese Journal of Applied Physics 45 (8L), L857, 2006 | 104 | 2006 |
Bandgap engineering of α-(AlxGa1-x) 2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law GT Dang, T Yasuoka, Y Tagashira, T Tadokoro, W Theiss, ... Applied Physics Letters 113 (6), 2018 | 82 | 2018 |
Low-temperature growth of ZnO thin films by linear source ultrasonic spray chemical vapor deposition H Nishinaka, T Kawaharamura, S Fujita Japanese Journal of Applied Physics 46 (10R), 6811, 2007 | 72 | 2007 |
Electrical properties of the thin-film transistor with an indium–gallium–zinc oxide channel and an aluminium oxide gate dielectric stack formed by solution-based atmospheric … M Furuta, T Kawaharamura, D Wang, T Toda, T Hirao IEEE electron device letters 33 (6), 851-853, 2012 | 63 | 2012 |
Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition T Shirahata, T Kawaharamura, S Fujita, H Orita Thin Solid Films 597, 30-38, 2015 | 60 | 2015 |
Porosity-tuned thermal conductivity in thermoelectric Al-doped ZnO thin films grown by mist-chemical vapor deposition S Saini, P Mele, T Oyake, J Shiomi, JP Niemelä, M Karppinen, K Miyazaki, ... Thin Solid Films 685, 180-185, 2019 | 55 | 2019 |
Metal-semiconductor field-effect transistors with In–Ga–Zn–O channel grown by nonvacuum-processed mist chemical vapor deposition GT Dang, T Kawaharamura, M Furuta, MW Allen IEEE Electron Device Letters 36 (5), 463-465, 2015 | 53 | 2015 |
Fabrication and Properties of ZnO Thin Films Prepared by Fine Channel Mist Mehtod T KAWAHARAMURA, H NISHINAKA, K KAMETANI, Y MASUDA, ... 材料 55 (2), 153-158, 2006 | 45 | 2006 |
Silver oxide Schottky contacts and metal semiconductor field-effect transistors on SnO2 thin films GT Dang, T Uchida, T Kawaharamura, M Furuta, AR Hyndman, ... Applied Physics Express 9 (4), 041101, 2016 | 43 | 2016 |
Roles of hydrogen and nitrogen in p-type doping of ZnO JG Lu, S Fujita, T Kawaharamura, H Nishinaka Chemical physics letters 441 (1-3), 68-71, 2007 | 42 | 2007 |
Growth and electrical properties of AlOx grown by mist chemical vapor deposition T Kawaharamura, T Uchida, M Sanada, M Furuta AIP advances 3 (3), 2013 | 41 | 2013 |
Mist CVD growth of ZnO-based thin films and nanostructures Y Masuda Journal of the Korean Physical Society 53 (5), 2976-2980, 2008 | 40 | 2008 |