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川原村 敏幸, Toshiyuki Kawaharamura
川原村 敏幸, Toshiyuki Kawaharamura
高知工科大学 総合研究所
在 iic.kyoto-u.ac.jp 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Carrier concentration dependence of band gap shift in n-type ZnO: Al films
JG Lu, S Fujita, T Kawaharamura, H Nishinaka, Y Kamada, T Ohshima, ...
Journal of Applied Physics 101 (8), 2007
5232007
ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition
JG Lu, T Kawaharamura, H Nishinaka, Y Kamada, T Ohshima, S Fujita
Journal of Crystal Growth 299 (1), 1-10, 2007
2152007
Successful growth of conductive highly crystalline Sn-doped α-Ga2O3 thin films by fine-channel mist chemical vapor deposition
T Kawaharamura, GT Dang, M Furuta
Japanese Journal of Applied Physics 51 (4R), 040207, 2012
1752012
Growth of crystalline zinc oxide thin films by fine-channel-mist chemical vapor deposition
T Kawaharamura, H Nishinaka, S Fujita
Japanese Journal of Applied Physics 47 (6R), 4669, 2008
1392008
Carrier concentration induced band-gap shift in Al-doped Zn1− xMgxO thin films
JG Lu, S Fujita, T Kawaharamura, H Nishinaka, Y Kamada, T Ohshima
Applied physics letters 89 (26), 2006
1312006
Physics on development of open-air atmospheric pressure thin film fabrication technique using mist droplets: Control of precursor flow
T Kawaharamura
Japanese Journal of Applied Physics 53 (5S1), 05FF08, 2014
1262014
Mist-CVD Grown Sn-Doped-Ga2O3MESFETs
GT Dang, T Kawaharamura, M Furuta, MW Allen
IEEE Transactions on Electron Devices 62 (11), 3640-3644, 2015
1122015
Second order optical effects in Au nanoparticle-deposited ZnO nanocrystallite films
K Ozga, T Kawaharamura, AA Umar, M Oyama, K Nouneh, A Slezak, ...
Nanotechnology 19 (18), 185709, 2008
1102008
Linear-source ultrasonic spray chemical vapor deposition method for fabrication of ZnMgO films and ultraviolet photodetectors
Y Kamada, T Kawaharamura, H Nishinaka, S Fujita
Japanese Journal of Applied Physics 45 (8L), L857, 2006
1042006
Bandgap engineering of α-(AlxGa1-x) 2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law
GT Dang, T Yasuoka, Y Tagashira, T Tadokoro, W Theiss, ...
Applied Physics Letters 113 (6), 2018
822018
Low-temperature growth of ZnO thin films by linear source ultrasonic spray chemical vapor deposition
H Nishinaka, T Kawaharamura, S Fujita
Japanese Journal of Applied Physics 46 (10R), 6811, 2007
722007
Electrical properties of the thin-film transistor with an indium–gallium–zinc oxide channel and an aluminium oxide gate dielectric stack formed by solution-based atmospheric …
M Furuta, T Kawaharamura, D Wang, T Toda, T Hirao
IEEE electron device letters 33 (6), 851-853, 2012
632012
Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition
T Shirahata, T Kawaharamura, S Fujita, H Orita
Thin Solid Films 597, 30-38, 2015
602015
Porosity-tuned thermal conductivity in thermoelectric Al-doped ZnO thin films grown by mist-chemical vapor deposition
S Saini, P Mele, T Oyake, J Shiomi, JP Niemelä, M Karppinen, K Miyazaki, ...
Thin Solid Films 685, 180-185, 2019
552019
Metal-semiconductor field-effect transistors with In–Ga–Zn–O channel grown by nonvacuum-processed mist chemical vapor deposition
GT Dang, T Kawaharamura, M Furuta, MW Allen
IEEE Electron Device Letters 36 (5), 463-465, 2015
532015
Fabrication and Properties of ZnO Thin Films Prepared by Fine Channel Mist Mehtod
T KAWAHARAMURA, H NISHINAKA, K KAMETANI, Y MASUDA, ...
材料 55 (2), 153-158, 2006
452006
Silver oxide Schottky contacts and metal semiconductor field-effect transistors on SnO2 thin films
GT Dang, T Uchida, T Kawaharamura, M Furuta, AR Hyndman, ...
Applied Physics Express 9 (4), 041101, 2016
432016
Roles of hydrogen and nitrogen in p-type doping of ZnO
JG Lu, S Fujita, T Kawaharamura, H Nishinaka
Chemical physics letters 441 (1-3), 68-71, 2007
422007
Growth and electrical properties of AlOx grown by mist chemical vapor deposition
T Kawaharamura, T Uchida, M Sanada, M Furuta
AIP advances 3 (3), 2013
412013
Mist CVD growth of ZnO-based thin films and nanostructures
Y Masuda
Journal of the Korean Physical Society 53 (5), 2976-2980, 2008
402008
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