关注
Guilherme A.S. Ribeiro
Guilherme A.S. Ribeiro
在 fis.grad.ufmg.br 的电子邮件经过验证
标题
引用次数
引用次数
年份
Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles
GAS Ribeiro, L Paulatto, R Bianco, I Errea, F Mauri, M Calandra
Physical Review B 97 (1), 014306, 2018
842018
Surface structure of BiSe(111) determined by low-energy electron diffraction and surface x-ray diffraction
DD dos Reis, L Barreto, M Bianchi, GAS Ribeiro, EA Soares, WS Silva, ...
Physical Review B—Condensed Matter and Materials Physics 88 (4), 041404, 2013
432013
Temperature-Induced Coexistence of a Conducting Bilayer and the Bulk-Terminated Surface of the Topological Insulator Bi2Te3
PM Coelho, GAS Ribeiro, A Malachias, VL Pimentel, WS Silva, DD Reis, ...
Nano letters 13 (9), 4517-4521, 2013
402013
Origin of the complex Raman tensor elements in single-layer triclinic ReSe2
GC Resende, GAS Ribeiro, OJ Silveira, JS Lemos, JC Brant, D Rhodes, ...
2D Materials 8 (2), 025002, 2020
152020
Multiple strong topological gaps and hexagonal warping in
T Chagas, OA Ashour, GAS Ribeiro, WS Silva, Z Li, SG Louie, ...
Physical Review B 105 (8), L081409, 2022
112022
Bi2: Bi2Te3 stacking influence on the surface electronic response of the topological insulator Bi4Te3
T Chagas, GAS Ribeiro, PHR Gonçalves, L Calil, WS Silva, Â Malachias, ...
Electronic Structure 2 (1), 015002, 2020
112020
Activation of topological insulator phase in kagomé-type bilayers by interlayer coupling: The cases of Ni (CO) 4 and Pd (CO) 4
OJ Silveira, GAS Ribeiro, H Chacham
Applied Physics Letters 116 (10), 2020
52020
Direct observation of large strain through van der Waals gaps on epitaxial B i 2 T e 3/graphite: Pseudomorphic relaxation and the role of B i 2 layers on the B ix T ey …
G Rodrigues-Junior, LAB Marçal, GAS Ribeiro, PHO Rappl, E Abramof, ...
Physical Review Materials 4 (2), 023602, 2020
52020
A combined LEED and DFT surface structure determination of Cu3Au (001): Evidence of a surface stacking fault
AAC Cotta, DVP Massote, GAS Ribeiro, GCS Valadares, RB Capaz, ...
Surface science 618, 167-172, 2013
52013
Effects of dimensionality and excitation energy on the Raman tensors of triclinic ReSe2
GC Resende, GAS Ribeiro, OJ Silveira, JS Lemos, D Rhodes, L Balicas, ...
Journal of Raman Spectroscopy, 2021
42021
Electronic gap stability of two-dimensional tin monosulfide phases: Towards optimal structures for electronic device applications
TC Ribeiro, R Reis, DC Ferreira, DR Miquita, GAS Ribeiro, MSC Mazzoni, ...
Applied Surface Science 591, 153153, 2022
32022
Estudo por primeiros princípios das propriedades estruturais e eletrônicas dos compostos Bi2Te3 e Bi2Se3
GAS Ribeiro
Universidade Federal de Minas Gerais, 2013
12013
Raman Spectroscopy on Free-Base Meso-tetra (4-pyridyl) Porphyrin under Conditions of Low Temperature and High Hydrostatic Pressure
JRT Dos Reis, FF Leite, K Sharma, GAS Ribeiro, WHN Silva, AA Batista, ...
Molecules 29 (10), 2362, 2024
2024
Vibrational and electronic properties of Na2Ti6O13.
GAS Ribeiro, K Balzuweit, JL Bantignies, RL Moreira, A Righi
Journal of Raman Spectroscopy 54 (5), 2023
2023
Electron-phonon processes in low symmetry 2Dmaterials investigated by polarized and resonance Raman spectroscopy
M Pimenta, L Balicas, M Terrones, D Rhodes, O Silveira, M SC Mazzoni, ...
APS March Meeting Abstracts 2023, S21. 013, 2023
2023
Mg-doped GaAs nanowires with enhanced surface alloying for use as ohmic contacts in nanoelectronic devices
T Chagas, GAS Ribeiro, BLT Rosa, D Bahrami, A Davtyan, RR Barreto, ...
ACS Applied Nano Materials 4 (11), 12640-12649, 2021
2021
Strong anharmonicity in the phonon spectra of PbTe and SnTe evaluated via the stochastic self-consistent harmonic approximation.
GAS Ribeiro
Université Pierre et Marie Curie-Paris VI, 2017
2017
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