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Vladimir Chaldyshev
Vladimir Chaldyshev
在 mail.ioffe.ru 的电子邮件经过验证
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引用次数
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Gallium arsenide grown by molecular beam epitaxy at low temperatures: Crystal structure, properties, superconductivity
NA BERNT, AI Veinger, BR SEMYAGIN, VV TRET'YAKOV, ...
Physics of the solid state 35 (10), 1289-1297, 1993
821993
Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties
MG Mil’vidskii, VV Chaldyshev
Semiconductors 32 (5), 457-465, 1998
801998
Molecular beam epitaxy growth and characterization of thin (< 2 mu m) GaSb layers on GaAs (100) substrates
SV Ivanov, PD Altukhov, TS Argunova, AA Bakun, AA Budza, ...
Semiconductor science and technology 8 (3), 347, 1993
521993
Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs
VV Chaldyshev, AL Kolesnikova, NA Bert, AE Romanov
Journal of applied physics 97 (2), 2005
482005
Optical lattices of InGaN quantum well excitons
VV Chaldyshev, AS Bolshakov, EE Zavarin, AV Sakharov, WV Lundin, ...
Applied Physics Letters 99 (25), 2011
472011
Two-dimensional organization of As clusters in GaAs
VV Chaldyshev
Materials Science and Engineering: B 88 (2-3), 195-204, 2002
462002
Local stresses induced by nanoscale As–Sb clusters in GaAs matrix
VV Chaldyshev, NA Bert, AE Romanov, AA Suvorova, AL Kolesnikova, ...
Applied Physics Letters 80 (3), 377-379, 2002
432002
Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature
NA Bert, VV Chaldyshev, NN Faleev, AE Kunitsyn, DI Lubyshev, ...
Semiconductor science and technology 12 (1), 51, 1997
421997
Determination of stress, strain, and elemental distribution within In (Ga) As quantum dots embedded in GaAs using advanced transmission electron microscopy
N Cherkashin, S Reboh, MJ Hÿtch, A Claverie, VV Preobrazhenskii, ...
Applied Physics Letters 102 (17), 2013
412013
Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state
VV Chaldyshev, Y Chen, AN Poddubny, AP Vasil’Ev, Z Liu
Applied Physics Letters 98 (7), 2011
412011
In–Ga intermixing in low-temperature grown GaAs delta doped with In
NA Bert, VV Chaldyshev, YG Musikhin, AA Suvorova, VV Preobrazhenskii, ...
Applied physics letters 74 (10), 1442-1444, 1999
401999
Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
NA Bert, VV Chaldyshev, AA Suvorova, VV Preobrazhenskii, MA Putyato, ...
Applied physics letters 74 (11), 1588-1590, 1999
381999
Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs
VV Chaldyshev, NA Bert, YG Musikhin, AA Suvorova, VV Preobrazhenskii, ...
Applied Physics Letters 79 (9), 1294-1296, 2001
362001
Enhanced arsenic excess in low-temperature grown GaAs due to indium doping
NA Bert, VV Chaldyshev, AE Kunitsyn, YG Musikhin, NN Faleev, ...
Applied physics letters 70 (23), 3146-3148, 1997
331997
Stress relaxation scenario for buried quantum dots
VV Chaldyshev, NA Bert, AL Kolesnikova, AE Romanov
Physical Review B—Condensed Matter and Materials Physics 79 (23), 233304, 2009
302009
Elastic behavior of a spherical inclusion with a given uniaxial dilatation
NA Bert, AL Kolesnikova, AE Romanov, VV Chaldyshev
Physics of the Solid State 44, 2240-2250, 2002
302002
Elastic-energy relaxation in heterostructures with strained nanoinclusions
AL Kolesnikova, AE Romanov, VV Chaldyshev
Physics of the Solid State 49, 667-674, 2007
242007
High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
NN Faleev, VV Chaldyshev, AE Kunitsyn, VV Tret’yakov, ...
Semiconductors 32, 19-25, 1998
231998
Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells
AS Bolshakov, VV Chaldyshev, EE Zavarin, AV Sakharov, WV Lundin, ...
Journal of Applied Physics 121 (13), 2017
222017
Structural transformations in low-temperature grown GaAs: Sb
DA Vasyukov, MV Baidakova, VV Chaldyshev, AA Suvorova, ...
Journal of Physics D: Applied Physics 34 (10A), A15, 2001
202001
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