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Adriano Diaz Fattorini
Adriano Diaz Fattorini
PhD student, Università degli Studi di Roma "Tor Vergata"
在 roma2.infn.it 的电子邮件经过验证
标题
引用次数
引用次数
年份
Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy
A Díaz Fattorini, C Chèze, I López García, C Petrucci, M Bertelli, ...
Nanomaterials 12 (8), 1340, 2022
102022
Toward Sustainable Electronics: Exploiting the Potential of a Biodegradable Cellulose Blend for Photolithographic Processes and Eco‐Friendly Devices
E Palmieri, L Maiolo, I Lucarini, AD Fattorini, E Tamburri, S Orlanducci, ...
Advanced Materials Technologies 9 (1), 2301282, 2024
82024
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide
M Bertelli, A Díaz Fattorini, S De Simone, S Calvi, R Plebani, V Mussi, ...
Nanomaterials 12 (12), 2001, 2022
82022
Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys
C Chèze, F Righi Riva, G Di Bella, E Placidi, S Prili, M Bertelli, ...
Nanomaterials 12 (6), 1007, 2022
62022
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation
M Bertelli, G Sfuncia, S De Simone, A Diaz Fattorini, S Calvi, V Mussi, ...
Scientific Reports 14 (1), 15713, 2024
2024
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics
S Calvi, M Bertelli, S De Simone, F Maita, S Prili, A Diaz Fattorini, ...
Advanced Electronic Materials, 2400184, 2024
2024
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide. Nanomaterials 2022, 12, 2001
M Bertelli, A Díaz Fattorini, S De Simone, S Calvi, R Plebani, V Mussi, ...
Synthesis, Properties and Applications of Germanium Chalcogenides, 5, 2022
2022
In-Based PCM Heterostructures—Electronic Properties at the Interface and Confinement of Thin Sb Layers
S Prili, FR Riva, E Placidi, AD Fattorini, C Chèze, M Bertelli, M Longo, ...
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