| On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers J Xie, X Ni, Q Fan, R Shimada, Ü Özgür, H Morkoç Applied Physics Letters 93 (12), 2008 | 444 | 2008 |
| Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells X Ni, Q Fan, R Shimada, Ü Özgür, H Morkoç Applied Physics Letters 93 (17), 2008 | 281 | 2008 |
| Optimization of (112¯ 0) a-plane GaN growth by MOCVD on (11¯ 02) r-plane sapphire X Ni, Y Fu, YT Moon, N Biyikli, H Morkoc Journal of Crystal Growth 290 (1), 166-170, 2006 | 177 | 2006 |
| GaN-based light-emitting diodes: Efficiency at high injection levels Ü Ozgur, H Liu, X Li, X Ni, H Morkoc Proceedings of the IEEE 98 (7), 1180-1196, 2010 | 163 | 2010 |
| High electron mobility in nearly lattice-matched AlInN∕ AlN∕ GaN heterostructure field effect transistors J Xie, X Ni, M Wu, JH Leach, Ü Özgür, H Morkoç Applied Physics Letters 91 (13), 2007 | 161 | 2007 |
| Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ... Applied Physics Letters 95 (12), 2009 | 132* | 2009 |
| InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ... Applied Physics Letters 97 (3), 2010 | 117 | 2010 |
| Epitaxial lateral overgrowth of (112 2) semipolar GaN on (11 00) m-plane sapphire by metalorganic chemical vapor deposition X Ni, Ü Özgür, AA Baski, H Morkoç, L Zhou, DJ Smith, CA Tran Applied physics letters 90 (18), 2007 | 114 | 2007 |
| Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy S Chevtchenko, X Ni, Q Fan, AA Baski, H Morkoç Applied physics letters 88 (12), 2006 | 91 | 2006 |
| Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis Journal of Applied Physics 108 (3), 2010 | 85 | 2010 |
| Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork J Xie, Ü Özgür, Y Fu, X Ni, H Morkoç, CK Inoki, TS Kuan, JV Foreman, ... Applied physics letters 90 (4), 2007 | 75 | 2007 |
| Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth X Ni, Ü Özgür, Y Fu, N Biyikli, J Xie, AA Baski, H Morkoç, Z Liliental-Weber Applied physics letters 89 (26), 2006 | 65 | 2006 |
| Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers J Xie, JH Leach, X Ni, M Wu, R Shimada, Ü Özgür, H Morkoç Applied Physics Letters 91 (26), 2007 | 58 | 2007 |
| Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ... Applied Physics Letters 95 (22), 2009 | 56 | 2009 |
| Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency X Ni, X Li, J Lee, S Liu, V Avrutin, A Matulionis, Ü Özgür, H Morkoç Superlattices and Microstructures 48 (2), 133-153, 2010 | 54 | 2010 |
| Nonpolar m-plane GaN on patterned Si (112) substrates by metalorganic chemical vapor deposition X Ni, M Wu, J Lee, X Li, AA Baski, Ü Özgür, H Morkoç Applied Physics Letters 95 (11), 2009 | 51 | 2009 |
| Reactive ion etch damage on GaN and its recovery Q Fan, S Chevtchenko, X Ni, SJ Cho, F Yun, H Morkoç Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 48 | 2006 |
| Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels A Matulionis, J Liberis, I Matulionienė, M Ramonas, E Šermukšnis, ... Applied Physics Letters 95 (19), 2009 | 47 | 2009 |
| Ballistic transport in InGaN-based LEDs: impact on efficiency Ü Özgür, X Ni, X Li, J Lee, S Liu, S Okur, V Avrutin, A Matulionis, H Morkoc Semiconductor science and technology 26 (1), 014022, 2010 | 41 | 2010 |
| Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ... Applied Physics Letters 96 (13), 2010 | 40 | 2010 |
