| Alternative negative weight for simpler hardware implementation of synapse device based neuromorphic system G Han, C Lee, JE Lee, J Seo, M Kim, Y Song, YH Seo, D Lee Scientific reports 11 (1), 23198, 2021 | 21 | 2021 |
| Ion-driven electrochemical random-access memory-based synaptic devices for neuromorphic computing systems: A mini-review H Kang, J Seo, H Kim, HW Kim, ER Hong, N Kim, D Lee, J Woo Micromachines 13 (3), 453, 2022 | 9 | 2022 |
| Li memristor-based MOSFET synapse for linear I–V characteristic and processing analog input neuromorphic system C Lee, JE Lee, M Kim, Y Song, G Han, J Seo, DW Kim, YH Seo, H Hwang, ... Japanese Journal of Applied Physics 60 (2), 024003, 2021 | 9 | 2021 |
| Multinary data processing based on nonlinear synaptic devices M Kim, JE Lee, C Lee, Y Song, G Han, J Seo, DW Kim, YH Seo, H Hwang, ... Journal of Electronic Materials 50, 3471-3477, 2021 | 7 | 2021 |
| Role of the electrolyte layer in CMOS-compatible and oxide-based vertical three-terminal ECRAM G Han, J Seo, H Kim, D Lee Journal of Materials Chemistry C 11 (15), 5167-5173, 2023 | 6 | 2023 |
| Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance H Kim, G Han, J Seo, D Lee Advanced Electronic Materials 9 (7), 2300133, 2023 | 3 | 2023 |
| Novel training method for metal-oxide memristive synapse device to overcome trade-off between linearity and dynamic range J Seo, G Han, D Lee Nanotechnology 33 (36), 365202, 2022 | 3 | 2022 |
| Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device H Kim, J Seo, S Cho, S Jeon, J Woo, D Lee Scientific Reports 13 (1), 14325, 2023 | 2 | 2023 |
| Solid state thin electrolyte to overcome transparency-capacity dilemma of transparent supercapacitor J Seo, G Han, H Kim, D Lee Scientific Reports 12 (1), 15923, 2022 | 2 | 2022 |
| Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior J Seo, G Han, H Kim, D Lee Micromachines 13 (11), 1874, 2022 | 1 | 2022 |
| Highly Scalable Vertical Bypass RRAM Using Interface-Type Resistive Switching Mechanism for V-Nand Memory Applications G Han, J Seo, K Lee, D Kim, Y Seo, J Lee, J Choi, D Ahn, S Oh, H Hwang IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Excellent Endurance (> 1013) of Charge Trap Memory based on HxWO3 Charge Trap Layer with Shallow Trap Level Using Hydrogen Spillover G Han, J Kim, Y Kim, J Seo, D Lee, H Hwang IEEE Electron Device Letters, 2024 | | 2024 |
| Enhanced Memory Window and Excellent Endurance in FeFET with Ultrathin 2DEG Oxide Channel J Seo, J Kim, G Han, L Jung, H Jang, O Kwon, H Hwang IEEE Electron Device Letters, 2024 | | 2024 |
| Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas J Kim, O Kwon, J Seo, H Hwang Advanced Electronic Materials, 2400650, 2024 | | 2024 |
| Gradual transmittance controllable device via ion intercalation for spatial light modulators Y Song, M Kim, G Han, J Seo, Y Seo, D Lee Optical Materials Express 11 (5), 1497-1503, 2021 | | 2021 |
