| On the performance of supercapacitors with electrodes based on carbon nanotubes and carbon activated material—A review VVN Obreja Physica E: Low-dimensional Systems and Nanostructures 40 (7), 2596-2605, 2008 | 588 | 2008 |
| Activated carbon based electrodes in commercial supercapacitors and their performance VVN Obreja, A Dinescu, AC Obreja Int. Rev. Electr. Eng 5 (1), 272-281, 2010 | 61 | 2010 |
| Supercapacitors specialities-Materials review VVN Obreja AIP Conference Proceedings 1597 (1), 98-120, 2014 | 50 | 2014 |
| An experimental investigation on the nature of reverse current of silicon power pn-junctions VVN Obreja IEEE Transactions on Electron Devices 49 (1), 155-163, 2002 | 41 | 2002 |
| On the leakage current of present-day manufactured semiconductor junctions VVN Obreja Solid-State Electronics 44 (1), 49-57, 2000 | 37 | 2000 |
| Extreme environment temperature sensor based on silicon carbide Schottky diode I Josan, C Boianceanu, G Brezeanu, V Obreja, M Avram, D Puscasu, ... 2009 International Semiconductor Conference 2, 525-528, 2009 | 29 | 2009 |
| On the high temperature operation of high voltage power devices VVN Obreja, KI Nuttall Proceedings. International Semiconductor Conference 2, 253-256, 2002 | 24 | 2002 |
| Experimental set-up for the measurement of the thermal conductivity of liquids C Codreanu, NI Codreanu, VVN Obreja Romanian Journal of Information Science and Technology 10 (3), 215-231, 2007 | 23 | 2007 |
| On the performance of commercial supercapacitors as storage devices for renewable electrical energy sources VVN Obreja RE&PQJ 5 (1), 2007 | 20 | 2007 |
| Surface leakage current related failure of power silicon devices operated at high junction temperature KI Nuttall, O Buiu, VVN Obreja Microelectronics Reliability 43 (9-11), 1913-1918, 2003 | 19 | 2003 |
| Reverse leakage current instability of power fast switching diodes operating at high junction temperature VVN Obreja, C Codreanu, KI Nuttall 2005 IEEE 36th Power Electronics Specialists Conference, 537-540, 2005 | 18 | 2005 |
| Interface states and related surface currents in SiC junctions C Codreanu, M Avram, V Obreja, C Voitincu, I Codreanu 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat …, 2003 | 15 | 2003 |
| Peaks in temperature distribution over the area of operating power semiconductor junctions related to the surface leakage current VVN Obreja, C Codreanu, KI Nuttall, I Codreanu EuroSimE 2005. Proceedings of the 6th International Conference on Thermal …, 2005 | 14 | 2005 |
| The operation temperature of silicon power thyristors and the blocking leakage current VVN Obreja, C Codreanu, C Podaru, KI Nuttall, O Buiu 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No …, 2004 | 13 | 2004 |
| Activation energy values from the temperature dependence of silicon PN junction reverse current and its origin VVN Obreja, AC Obreja physica status solidi (a) 207 (5), 1252-1256, 2010 | 12 | 2010 |
| On the reliability of power silicon rectifier diodes above the maximum permissible operation junction temperature VVN Obreja 2006 IEEE International Symposium on Industrial Electronics 2, 835-840, 2006 | 12 | 2006 |
| Electrical characteristics of present-day manufactured power semiconductor PN junctions and the IV characteristic theory VVN Obreja, KI Nuttall, O Buiu 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat …, 2003 | 12 | 2003 |
| Reverse current instability of power silicon diodes (thyristors) at high temperature and the junction surface leakage current VVN Obreja, CC Codreanu, KI Nuttall, O Buiu Proceedings of the IEEE International Symposium on Industrial Electronics …, 2005 | 11 | 2005 |
| Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic VVN Obreja, C Codreanu, D Poenar, O Buiu Microelectronics Reliability 51 (3), 536-542, 2011 | 10 | 2011 |
| The voltage dependence of reverse current of semiconductor PN junctions and its distribution over the device area VVN Obreja 2007 International Semiconductor Conference 2, 485-488, 2007 | 10 | 2007 |
