| X-ray topography characterization of gallium nitride substrates for power device development B Raghothamachar, Y Liu, H Peng, T Ailihumaer, M Dudley, ... Journal of Crystal Growth 544, 125709, 2020 | 28 | 2020 |
| Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates Y Liu, B Raghothamachar, H Peng, T Ailihumaer, M Dudley, R Collazo, ... Journal of Crystal Growth 551, 125903, 2020 | 19 | 2020 |
| Relationship between basal plane dislocation distribution and local basal plane bending in PVT-grown 4H-SiC crystals T Ailihumaer, H Peng, B Raghothamachar, M Dudley, G Chung, ... Journal of Electronic Materials 49 (6), 3455-3464, 2020 | 16 | 2020 |
| Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC F Fujie, H Peng, T Ailihumaer, B Raghothamachar, M Dudley, S Harada, ... Acta Materialia 208, 116746, 2021 | 15 | 2021 |
| Dislocation contrast on X-ray topographs under weak diffraction conditions H Peng, T Ailihumaer, Y Liu, B Raghotharmachar, X Huang, L Assoufid, ... Journal of Applied Crystallography 54 (4), 1225-1233, 2021 | 14 | 2021 |
| Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g· b= 0 and g· b× l= 0 H Peng, T Ailihumaer, F Fujie, Z Chen, B Raghothamachar, M Dudley Journal of Applied Crystallography 54 (2), 439-443, 2021 | 10 | 2021 |
| Characterization of prismatic slip in PVT-grown AlN crystals S Hu, H Fang, Y Liu, H Peng, Q Cheng, Z Chen, R Dalmau, J Britt, ... Journal of Crystal Growth 584, 126548, 2022 | 8 | 2022 |
| Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers T Ailihumaer, HY Peng, B Raghothamachar, M Dudley, G Chung, ... Materials Science Forum 1004, 393-400, 2020 | 8 | 2020 |
| Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers H Peng, T Ailihumaer, B Raghothamachar, M Dudley Journal of Electronic Materials 49 (6), 3472-3480, 2020 | 7 | 2020 |
| Synchrotron X-ray topography studies of dislocation behavior during early stages of PVT growth of 4H-SiC crystals T Ailihumaer, H Peng, Y Liu, B Raghothamachar, M Dudley, G Chung, ... Journal of Electronic Materials 50, 3258-3265, 2021 | 6 | 2021 |
| Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography Y Liu, Z Chen, S Hu, H Peng, Q Cheng, B Raghothamachar, M Dudley Journal of Crystal Growth 583, 126559, 2022 | 5 | 2022 |
| Characterization of 4H-SiC lattice damage after novel high energy ion implantation Z Chen, Y Liu, H Peng, T Ailihumaer, Q Cheng, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 75, 2021 | 5 | 2021 |
| Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals T Ailihumaer, H Peng, F Fujie, B Raghothamachar, M Dudley, S Harada, ... Materials Science and Engineering: B 271, 115281, 2021 | 5 | 2021 |
| Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution H Peng, Z Chen, Y Liu, B Raghothamachar, X Huang, L Assoufid, ... Journal of Applied Crystallography 55 (3), 544-550, 2022 | 4 | 2022 |
| Microstructure analysis of GaN epitaxial layers during ion implantation using synchrotron X-ray topography Y Liu, H Peng, Z Chen, T Ailihumaer, Q Cheng, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 113, 2021 | 4 | 2021 |
| Analysis of basal plane dislocation motion induced by P+ Ion implantation using synchrotron X-ray topography ZY Chen, Y Liu, HY Peng, QY Cheng, SS Hu, B Raghothamachar, ... Defect and Diffusion Forum 426, 71-78, 2023 | 3 | 2023 |
| Analysis of dislocation contrast in synchrotron grazing-incidence x-ray topographs and ray-tracing simulation in off-axis 4h-sic crystals T Ailihumaer, H Peng, Y Liu, Q Cheng, Z Chen, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 157, 2021 | 3 | 2021 |
| Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations Q Cheng, T Ailihumaer, Y Liu, H Peng, Z Chen, B Raghothamachar, ... Journal of Electronic Materials 50 (7), 4104-4117, 2021 | 3 | 2021 |
| X-ray topography characterization of GaN substrates used for power electronic devices Y Liu, H Peng, T Ailihumaer, B Raghothamachar, M Dudley Journal of Electronic Materials 50, 2981-2989, 2021 | 3 | 2021 |
| In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers J Guo, T Ailihumaer, H Peng, B Raghothamachar, M Dudley ECS Transactions 86 (12), 75, 2018 | 3 | 2018 |
Michael DudleyStony Brook Univ., Univ. of Warwick, Strathclyde Univ., Université Pierre et Marie Curie (Paris 6)在 stonybrook.edu 的电子邮件经过验证
