| Integrated silicon photonics for enabling next-generation space systems GN Tzintzarov, SG Rao, JD Cressler Photonics 8 (4), 131, 2021 | 35 | 2021 |
| Using TCAD modeling to compare heavy-ion and laser-induced single event transients in SiGe HBTs ZE Fleetwood, NE Lourenco, A Ildefonso, JH Warner, MT Wachter, ... IEEE Transactions on Nuclear Science 64 (1), 398-405, 2016 | 32 | 2016 |
| Optimizing optical parameters to facilitate correlation of laser-and heavy-ion-induced single-event transients in SiGe HBTs A Ildefonso, ZE Fleetwood, GN Tzintzarov, JM Hales, D Nergui, ... IEEE Transactions on Nuclear Science 66 (1), 359-367, 2018 | 28 | 2018 |
| New approach for pulsed-laser testing that mimics heavy-ion charge deposition profiles JM Hales, A Khachatrian, S Buchner, J Warner, A Ildefonso, ... IEEE Transactions on Nuclear Science 67 (1), 81-90, 2019 | 26 | 2019 |
| Comparison of single-event transients in SiGe HBTs on bulk and thick-film SOI A Ildefonso, GN Tzintzarov, D Nergui, AP Omprakash, PS Goley, ... IEEE Transactions on Nuclear Science 67 (1), 71-80, 2019 | 18 | 2019 |
| Optical single-event transients induced in integrated silicon-photonic waveguides by two-photon absorption GN Tzintzarov, A Ildefonso, JW Teng, M Frounchi, A Djikeng, P Iyengar, ... IEEE Transactions on Nuclear Science 68 (5), 785-792, 2021 | 17 | 2021 |
| Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform PS Goley, GN Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, ... IEEE Transactions on Nuclear Science 66 (1), 125-133, 2018 | 16 | 2018 |
| Single-event transients in SiGe HBTs induced by pulsed X-ray microbeam D Nergui, A Ildefonso, GN Tzintzarov, NE Lourenco, AP Omprakash, ... IEEE Transactions on Nuclear Science 67 (1), 91-98, 2019 | 12 | 2019 |
| SiGe HBT profiles with enhanced inverse-mode operation and their impact on single-event transients ZE Fleetwood, A Ildefonso, GN Tzintzarov, B Wier, U Raghunathan, ... IEEE transactions on Nuclear Science 65 (1), 399-406, 2017 | 12 | 2017 |
| Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics JM Hales, A Khachatrian, J Warner, S Buchner, A Ildefonso, ... Optics Express 27 (26), 37652-37666, 2019 | 11 | 2019 |
| Single-event transient response of comparator pre-amplifiers in a complementary SiGe technology A Ildefonso, NE Lourenco, ZE Fleetwood, MT Wachter, GN Tzintzarov, ... IEEE transactions on Nuclear Science 64 (1), 89-96, 2016 | 11 | 2016 |
| High responsivity Ge phototransistor in commercial CMOS Si-photonics platform for monolithic optoelectronic receivers M Frounchi, GN Tzintzarov, A Ildefonso, JD Cressler IEEE Electron Device Letters 42 (2), 196-199, 2020 | 10 | 2020 |
| Utilizing SiGe HBT power detectors for sensing single-event transients in RF circuits A Ildefonso, CT Coen, ZE Fleetwood, GN Tzintzarov, MT Wachter, ... IEEE Transactions on Nuclear Science 65 (1), 239-248, 2017 | 10 | 2017 |
| Modeling single-event transient propagation in a SiGe BiCMOS direct-conversion receiver A Ildefonso, I Song, GN Tzintzarov, ZE Fleetwood, NE Lourenco, ... IEEE Transactions on Nuclear Science 64 (8), 2079-2088, 2017 | 10 | 2017 |
| Variability in total-ionizing-dose response of fourth-generation SiGe HBTs JW Teng, A Ildefonso, GN Tzintzarov, H Ying, A Moradinia, PF Wang, X Li, ... IEEE Transactions on Nuclear Science 68 (5), 949-957, 2021 | 9 | 2021 |
| Response of waveguide-integrated germanium-on-silicon pin photodiodes to neutron displacement damage PS Goley, NA Dodds, M Frounchi, GN Tzintzarov, RN Nowlin, JD Cressler IEEE Transactions on Nuclear Science 67 (1), 296-304, 2019 | 9 | 2019 |
| Single-event upset mitigation in a complementary SiGe HBT BiCMOS technology NE Lourenco, A Ildefonso, GN Tzintzarov, ZE Fleetwood, K Motoki, P Paki, ... IEEE Transactions on Nuclear Science 65 (1), 231-238, 2017 | 8 | 2017 |
| DC and RF variability of SiGe HBTs operating down to deep cryogenic temperatures H Ying, JW Teng, GN Tzintzarov, AP Omprakash, SG Rao, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 7 | 2019 |
| Tradeoffs between RF performance and SET robustness in low-noise amplifiers in a complementary SiGe BiCMOS platform A Ildefonso, GN Tzintzarov, NE Lourenco, ZE Fleetwood, A Khachatrian, ... IEEE Transactions on Nuclear Science 67 (7), 1521-1529, 2020 | 6 | 2020 |
| Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs using 1-MeV Electrons for Europa-Surface Applications JW Teng, D Nergui, GN Tzintzarov, BL Ringel, ZR Brumbach, JP Heimerl, ... IEEE Transactions on Nuclear Science, 2022 | 5 | 2022 |
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia Tech在 ece.gatech.edu 的电子邮件经过验证
