| Phase-Change Memory--Towards a Storage-Class Memory SW Fong, CM Neumann, HSP Wong IEEE Transactions on Electron Devices 64 (11), 4374 - 4385, 2017 | 402 | 2017 |
| Energy-efficient phase-change memory with graphene as a thermal barrier C Ahn, SW Fong, Y Kim, S Lee, A Sood, CM Neumann, M Asheghi, ... Nano letters 15 (10), 6809-6814, 2015 | 160 | 2015 |
| Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor. S Park, SJ Kim, JH Nam, G Pitner, TH Lee, AL Ayzner, H Wang, SW Fong, ... Advanced Materials (Deerfield Beach, Fla.) 27 (4), 759-765, 2014 | 150 | 2014 |
| Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase R Jeyasingh, SW Fong, J Lee, Z Li, KW Chang, D Mantegazza, M Asheghi, ... Nano letters 14 (6), 3419-3426, 2014 | 134 | 2014 |
| Picosecond electric-field-induced threshold switching in phase-change materials P Zalden, MJ Shu, F Chen, X Wu, Y Zhu, H Wen, S Johnston, ZX Shen, ... Physical Review Letters 117 (6), 067601, 2016 | 73 | 2016 |
| Stanford memory trends HSP Wong, C Ahn, J Cao, HY Chen, SW Fong, Z Jiang, C Neumann, ... tech. report, 2016 | 58 | 2016 |
| Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction SW Fong, A Sood, L Chen, N Kumari, M Asheghi, KE Goodson, ... Journal of Applied Physics 120 (1), 2016 | 42 | 2016 |
| Dual-Layer Dielectric Stack for Thermally Isolated Low-Energy Phase-Change Memory SW Fong, CM Neumann, E Yalon, MM Rojo, E Pop, HSP Wong IEEE Transactions on Electron Devices 64 (11), 4496-4502, 2017 | 38 | 2017 |
| Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS) Z Jiang, Z Wang, X Zheng, S Fong, S Qin, HY Chen, C Ahn, J Cao, Y Nishi, ... 2016 IEEE international electron devices meeting (IEDM), 21.3. 1-21.3. 4, 2016 | 18 | 2016 |
| Influence of defects and doping on optical phonon lifetime and Raman linewidth in carbon nanotubes D Abdula, KT Nguyen, K Kang, S Fong, T Ozel, DG Cahill, M Shim Physical Review B—Condensed Matter and Materials Physics 83 (20), 205419, 2011 | 14 | 2011 |
| Dual-layer dielectric stack for thermally-isolated low-power phase-change memory SW Fong, CM Neumann, HSP Wong 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 11 | 2017 |
| Ultrafast accelerated retention test methodology for RRAM using micro thermal stage Z Wang, Z Jiang, X Zheng, S Fong, HY Chen, HSP Wong, Y Nishi IEEE Electron Device Letters 38 (7), 863-866, 2017 | 10 | 2017 |
| Synaptic devices based on phase-change memory Y Shi, S Fong, HSP Wong, D Kuzum Neuro-inspired Computing Using Resistive Synaptic Devices, 19-51, 2017 | 8 | 2017 |
| Phase change memory R Jeyasingh, EC Ahn, SB Eryilmaz, S Fong, HSP Wong Emerging Nanoelectronic Devices, 78-109, 2014 | 6 | 2014 |
| Bidirectional analog conductance modulation for RRAM-based neural networks Z Jiang, Z Wang, X Zheng, SW Fong, S Qin, HY Chen, EC Ahn, J Cao, ... IEEE Transactions on Electron Devices 67 (11), 4904-4910, 2020 | 5 | 2020 |
| Laser-induced patterning for a diffraction grating using the phase change material of Ge2Sb2Te5 (GST) as a spatial light modulator in X-ray optics: a proof of … J Park, P Zalden, E Ng, S Johnston, SW Fong, C Chang, CJ Tassone, ... Optical Materials Express 12 (4), 1408-1416, 2022 | 3 | 2022 |
| Scanning microwave imaging of optically patterned Ge2Sb2Te5 SR Johnston, E Ng, SW Fong, WY Mok, J Park, P Zalden, A Sakdinawat, ... Applied Physics Letters 114 (9), 2019 | 3 | 2019 |
| Steady-state thermal conductivity measurement of dielectric stacks for phase-change memory power reduction SW Fong, L Chen, A Sood, N Kumari, M Asheghi, GA Gibson, HSP Wong HP Laboratories Technical Report, 2015 | 3 | 2015 |
| Characterization of phase-change layer thermal properties using a micro-thermal stage SW Fong, R Jeyasingh, M Asheghi, KE Goodson, HSP Wong Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena …, 2014 | 3 | 2014 |
| Graphene-inserted phase change memory device and method of fabricating the same Y Kim, C Ahn, A Sood, E Pop, HSP Wong, KE Goodson, S Fong, S Lee, ... US Patent 9,583,702, 2017 | 1 | 2017 |
