| Ageing and failure modes of IGBT modules in high-temperature power cycling V Smet, F Forest, JJ Huselstein, F Richardeau, Z Khatir, S Lefebvre, ... IEEE transactions on industrial electronics 58 (10), 4931-4941, 2011 | 693 | 2011 |
| Robustness of 1.2 kV SiC MOSFET devices D Othman, S Lefebvre, M Berkani, Z Khatir, A Ibrahim, A Bouzourene Microelectronics Reliability 53 (9-11), 1735-1738, 2013 | 81 | 2013 |
| Comparison study on performances and robustness between SiC MOSFET & JFET devices–Abilities for aeronautics application D Othman, M Berkani, S Lefebvre, A Ibrahim, Z Khatir, A Bouzourene Microelectronics Reliability 52 (9-10), 1859-1864, 2012 | 58 | 2012 |
| Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition A Oukaour, B Tala-Ighil, B Pouderoux, M Tounsi, M Bouarroudj-Berkani, ... Microelectronics Reliability 51 (2), 386-391, 2011 | 56 | 2011 |
| Etude de la fatigue thermo-mécanique de modules électroniques de puissance en ambiance de températures élevées pour des applications de traction de véhicules électriques et … M Bouarroudj-Berkani École normale supérieure de Cachan-ENS Cachan, 2008 | 39 | 2008 |
| Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications S Lefebvre, M Berkani, Z Khatir, A Ibrahim, A Bouzourene 2013 15th European Conference on Power Electronics and Applications (EPE), 1-9, 2013 | 35 | 2013 |
| Ageing of SiC JFET transistors under repetitive current limitation conditions M Bouarroudj-Berkani, D Othman, S Lefebvre, S Moumen, Z Khatir, ... Microelectronics reliability 50 (9-11), 1532-1537, 2010 | 35 | 2010 |
| Saturation current and on-resistance correlation during during repetitive short-circuit conditions on SiC JFET transistors M Berkani, S Lefebvre, Z Khatir IEEE transactions on power electronics 28 (2), 621-624, 2012 | 27 | 2012 |
| Failure modes and robustness of SiC JFET transistors under current limiting operations M Bouarroudj-Berkani, S Lefebvre, D Othman, SM Sabrine, Z Khatir, ... Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 20 | 2011 |
| Aluminum metallization and wire bonding aging in power MOSFET modules R Ruffilli, M Berkani, P Dupuy, S Lefebvre, Y Weber, B Warot-Fonrose, ... Materials Today: Proceedings 5 (6), 14641-14651, 2018 | 17 | 2018 |
| In-depth investigation of metallization aging in power MOSFETs R Ruffilli, M Berkani, P Dupuy, S Lefebvre, Y Weber, M Legros Microelectronics Reliability 55 (9-10), 1966-1970, 2015 | 15 | 2015 |
| Fatigue des composants électroniques de puissance-Physique de défaillance M Bouarroudj-Berkani, L Dupont Editions TI| Techniques de l'Ingénieur, 2010 | 12 | 2010 |
| EMC “Black Box” model for unbalanced power electronic converters A Gahfif, PÉ Levy, M Ali, M Berkani, F Costa 2019 International Symposium on Electromagnetic Compatibility-EMC EUROPE …, 2019 | 11 | 2019 |
| Robustness study of SiC MOSFET under harsh electrical and thermal constraints S Mbarek, P Dherbécourt, O Latry, F Fouquet, D Othman, M Berkani, ... Proc. CENICS, 11-15, 2014 | 11 | 2014 |
| Estimation of SiC JFET temperature during short-circuit operations M Berkani, S Lefebvre, N Boughrara, Z Khatir, JC Faugières, P Friedrichs, ... Microelectronics Reliability 49 (9-11), 1358-1362, 2009 | 11 | 2009 |
| Mechanisms of power module source metal degradation during electro-thermal aging R Ruffilli, M Berkani, P Dupuy, S Lefebvre, Y Weber, M Legros Microelectronics Reliability 76, 507-511, 2017 | 9 | 2017 |
| Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications G Rostaing, M Berkani, D Mechouche, D Labrousse, S Lefebvre, Z Khatir, ... Microelectronics Reliability 53 (9-11), 1703-1706, 2013 | 9 | 2013 |
| New investigation possibilities on forward biased power devices using cross sections T Kociniewski, J Moussodji, Z Khatir, M Berkani, S Lefebvre, S Azzopardi IEEE electron device letters 33 (4), 576-578, 2012 | 9 | 2012 |
| Reliability study of PCB-embedded power dies using solderless pressed metal foam S Bensebaa, M Berkani, S Lefebvre, M Petit, N Schmitt, S Zhang Microelectronics Reliability 114, 113904, 2020 | 8 | 2020 |
| Condition monitoring and evaluation of Ron degradation during power cycling in switching mode of SiC-Mosfets power modules A Ibrahim, R Lallemand, Z Khatir, M Berkani, D Ingrosso CIPS 2022; 12th International Conference on Integrated Power Electronics …, 2022 | 7 | 2022 |
Ali IbrahimUniversité Gustave Eiffel在 univ-eiffel.fr 的电子邮件经过验证
