| Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack MH Cho, CH Choi, HJ Seul, HC Cho, JK Jeong ACS Applied Materials & Interfaces 13 (14), 16628-16640, 2021 | 104 | 2021 |
| Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated semiconductor chips T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim, MH Cho, S Kim, JK Jeong Advanced Materials 35 (43), 2204663, 2023 | 49 | 2023 |
| Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs BK Kim, N On, CH Choi, MJ Kim, S Kang, JH Lim, JK Jeong IEEE Electron Device Letters 42 (3), 347-350, 2021 | 47 | 2021 |
| Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity T Kim, CH Choi, P Byeon, M Lee, A Song, KB Chung, S Han, SY Chung, ... npj 2D Materials and Applications 6 (1), 4, 2022 | 38 | 2022 |
| High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and … CH Choi, T Kim, S Ueda, YS Shiah, H Hosono, J Kim, JK Jeong ACS Applied Materials & Interfaces 13 (24), 28451-28461, 2021 | 37 | 2021 |
| Comparative study of atomic layer deposited indium-based oxide transistors with a Fermi energy level-engineered heterojunction structure channel through a cation combinatorial … MH Cho, CH Choi, JK Jeong ACS Applied Materials & Interfaces 14 (16), 18646-18661, 2022 | 28 | 2022 |
| Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications MH Cho, CH Choi, JK Jeong Journal of the Society for Information Display 30 (3), 175-197, 2022 | 16 | 2022 |
| High Mobility IZTO Thin‐Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction GB Kim, N On, T Kim, CH Choi, JS Hur, JH Lim, JK Jeong Small Methods 7 (7), 2201522, 2023 | 15 | 2023 |
| Origin of ambipolar behavior in p-type tin monoxide semiconductors: Impact of oxygen vacancy defects T Kim, MJ Kim, H Lee, H Xu, CH Choi, JK Kim, JK Jeong IEEE Transactions on Electron Devices 68 (9), 4467-4472, 2021 | 14 | 2021 |
| Hydrogen-doping-enabled boosting of the carrier mobility and stability in amorphous IGZTO transistors J Lee, CH Choi, T Kim, J Hur, MJ Kim, EH Kim, JH Lim, Y Kang, JK Jeong ACS Applied Materials & Interfaces 14 (51), 57016-57027, 2022 | 11 | 2022 |
| High-Performance Broadband Phototransistor Based on TeOx/IGTO Heterojunctions H Xu, T Kim, HS Han, MJ Kim, JS Hur, CH Choi, JH Chang, JK Jeong ACS Applied Materials & Interfaces 14 (2), 3008-3017, 2022 | 11 | 2022 |
| High-performance indium-based oxide transistors with multiple channels through nanolaminate structure fabricated by plasma-enhanced atomic layer deposition MH Cho, CH Choi, MJ Kim, JS Hur, T Kim, JK Jeong ACS Applied Materials & Interfaces 15 (15), 19137-19151, 2023 | 10 | 2023 |
| Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO2/IGZO Thin-Film Transistors CH Choi, T Kim, MJ Kim, SH Yoon, JK Jeong IEEE Transactions on Electron Devices 70 (5), 2317-2323, 2023 | 7 | 2023 |
| High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder T Kim, CH Choi, SE Kim, JK Kim, J Jang, SC Choi, J Noh, KS Park, J Kim, ... IEEE Electron Device Letters 44 (2), 269-272, 2022 | 6 | 2022 |
| Low-power driven broadband phototransistor with a PbS/IGO/HfO 2 stack H Xu, HS Han, JS Hur, MJ Kim, CH Choi, T Kim, JH Chang, JK Jeong Journal of Materials Chemistry C 11 (4), 1569-1578, 2023 | 3 | 2023 |
| Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors HY Lee, JS Hur, I Cho, CH Choi, SH Yoon, Y Kwon, B Shong, JK Jeong ACS Applied Materials & Interfaces 15 (44), 51399-51410, 2023 | 2 | 2023 |
| Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors GB Kim, T Kim, CH Choi, SW Chung, JK Jeong IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors GB Kim, T Kim, SW Bang, JS Hur, CH Choi, MJ Kim, JK Jeong ACS Applied Materials & Interfaces 16 (18), 23467-23475, 2024 | | 2024 |
| Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO … CH Choi, T Kim, MJ Kim, GB Kim, JE Oh, JK Jeong Scientific Reports 14 (1), 7623, 2024 | | 2024 |
| High Mobility IZTO Thin‐Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction (Small Methods 7/2023) GB Kim, N On, T Kim, CH Choi, JS Hur, JH Lim, JK Jeong Small Methods 7 (7), 2370036, 2023 | | 2023 |
Jae Kyeong JeongHanyang Univ.在 hanyang.ac.kr 的电子邮件经过验证
