| Visible-light-driven photocatalytic and photoelectrochemical properties of porous SnS x (x= 1, 2) architectures J Chao, Z Xie, XB Duan, Y Dong, Z Wang, J Xu, B Liang, B Shan, J Ye, ... CrystEngComm 14 (9), 3163-3168, 2012 | 139 | 2012 |
| High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate S Xu, W Wang, YC Huang, Y Dong, S Masudy-Panah, H Wang, X Gong, ... Optics Express 27 (4), 5798-5813, 2019 | 112 | 2019 |
| Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ... Optics Express 25 (14), 15818-15827, 2017 | 98 | 2017 |
| Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001) W Wang, Q Zhou, Y Dong, ES Tok, YC Yeo Applied Physics Letters 106 (23), 232106, 2015 | 90 | 2015 |
| ZnO-nanoparticle-assembled cloth for flexible photodetectors and recyclable photocatalysts B Liu, Z Wang, Y Dong, Y Zhu, Y Gong, S Ran, Z Liu, J Xu, Z Xie, D Chen, ... Journal of Materials Chemistry 22 (18), 9379-9384, 2012 | 88 | 2012 |
| Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ... Optics express 23 (14), 18611-18619, 2015 | 86 | 2015 |
| Demonstration of color display metasurfaces via immersion lithography on a 12-inch silicon wafer T Hu, CK Tseng, YH Fu, Z Xu, Y Dong, S Wang, KH Lai, V Bliznetsov, ... Optics Express 26 (15), 19548-19554, 2018 | 80 | 2018 |
| Large-area metasurface on CMOS-compatible fabrication platform: driving flat optics from lab to fab N Li, Z Xu, Y Dong, T Hu, Q Zhong, YH Fu, S Zhu, N Singh Nanophotonics 1 (ahead-of-print), 2020 | 72 | 2020 |
| Large-area pixelated metasurface beam deflector on a 12-inch glass wafer for random point generation N Li, YH Fu, Y Dong, T Hu, Z Xu, Q Zhong, D Li, KH Lai, S Zhu, Q Lin, ... Nanophotonics 8 (10), 1855-1861, 2019 | 68 | 2019 |
| Germanium-tin on Si avalanche photodiode: device design and technology demonstration Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ... IEEE Transactions on Electron Devices 62 (1), 128-135, 2015 | 62 | 2015 |
| CMOS-compatible a-Si metalenses on a 12-inch glass wafer for fingerprint imaging T Hu, Q Zhong, N Li, Y Dong, Z Xu, YH Fu, D Li, V Bliznetsov, Y Zhou, ... Nanophotonics, 2020 | 60 | 2020 |
| Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range W Wang, Y Dong, SY Lee, WK Loke, D Lei, SF Yoon, G Liang, X Gong, ... Optics Express 25 (16), 18502-18507, 2017 | 58 | 2017 |
| CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers Z Xu, Y Dong, CK Tseng, T Hu, J Tong, Q Zhong, N Li, L Sim, KH Lai, ... Optics Express 27 (18), 26060-26069, 2019 | 46 | 2019 |
| GeSn lateral pin photodetector on insulating substrate S Xu, YC Huang, KH Lee, W Wang, Y Dong, D Lei, S Masudy-Panah, ... Optics Express 26 (13), 17312-17321, 2018 | 45 | 2018 |
| In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector W Wang, S Vajandar, SL Lim, Y Dong, VR D'Costa, T Osipowicz, ES Tok, ... Journal of Applied Physics 119 (15), 155704, 2016 | 43 | 2016 |
| Si metasurface half-wave plates demonstrated on a 12-inch CMOS platform Y Dong, Z Xu, N Li, J Tong, YH Fu, Y Zhou, T Hu, Q Zhong, V Bliznetsov, ... Nanophotonics 9 (1), 149-157, 2019 | 42 | 2019 |
| High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform W Wang, D Lei, YC Huang, KH Lee, WK Loke, Y Dong, S Xu, CS Tan, ... Optics Express 26 (8), 10305-10314, 2018 | 37 | 2018 |
| Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate D Lei, KH Lee, YC Huang, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... IEEE Transactions on Electron Devices 65 (9), 3754-3761, 2018 | 33 | 2018 |
| The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs D Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... 2017 Symposium on VLSI Technology, T198-T199, 2017 | 33 | 2017 |
| Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1− x Sn x) Fin Structure W Wang, D Lei, Y Dong, X Gong, ES Tok, YC Yeo Scientific Reports 7 (1), 1835, 2017 | 32 | 2017 |
Ting Hu 胡挺Shanghai University. ex-IME, A*star在 shu.edu.cn 的电子邮件经过验证
