| Effect of ion species on the accumulation of ion-beam damage in GaN SO Kucheyev, JS Williams, C Jagadish, J Zou, G Li, AI Titov Physical Review B 64 (3), 035202, 2001 | 132 | 2001 |
| Energy spike effects in ion-bombarded GaN SO Kucheyev, AY Azarov, AI Titov, PA Karaseov, TM Kuchumova Journal of Physics D: Applied Physics 42 (8), 085309, 2009 | 51 | 2009 |
| Effect of the density of collision cascades on ion implantation damage in ZnO AY Azarov, SO Kucheyev, AI Titov, PA Karaseov Journal of Applied Physics 102 (8), 2007 | 50 | 2007 |
| Phonons in hexagonal InN. Experiment and theory VY Davydov, AA Klochikhin, MB Smirnov, VV Emtsev, VD Petrikov, ... physica status solidi (b) 216 (1), 779-783, 1999 | 48 | 1999 |
| Defect accumulation during room temperature N+ irradiation of silicon AI Titov, G Carter Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 48 | 1996 |
| Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions AI Titov, SO Kucheyev, VS Belyakov, AY Azarov Journal of Applied Physics 90 (8), 3867-3872, 2001 | 42 | 2001 |
| Mechanism for the molecular effect in Si bombarded with clusters of light atoms AI Titov, AY Azarov, LM Nikulina, SO Kucheyev Physical Review B—Condensed Matter and Materials Physics 73 (6), 064111, 2006 | 41 | 2006 |
| Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory AI Titov, VS Belyakov, AY Azarov Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003 | 38 | 2003 |
| Effect of the density of collision cascades on implantation damage in GaN SO Kucheyev, JS Williams, AI Titov, G Li, C Jagadish Applied Physics Letters 78 (18), 2694-2696, 2001 | 38 | 2001 |
| Physical Foundations of Electron-and Ion-Beam Technology IA Abroyan, AN Andronov, AI Titov Vysshaya Shkola, Moscow, 1984 | 31 | 1984 |
| Model for electrical isolation of GaN by light-ion bombardment AI Titov, SO Kucheyev Journal of applied physics 92 (10), 5740-5744, 2002 | 30 | 2002 |
| Ion beam induced amorphous–crystalline phase transition in Si: Quantitative approach AI Titov, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000 | 30 | 2000 |
| The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors NAG Ahmed, CE Christodoulides, G Carter, MJ Nobes, AI Titov Nuclear Instruments and Methods 168 (1-3), 283-288, 1980 | 28 | 1980 |
| Structural damage in ZnO bombarded by heavy ions AY Azarov, AI Titov, PA Karaseov, SO Kucheyev, A Hallén, AY Kuznetsov, ... Vacuum 84 (8), 1058-1061, 2010 | 26 | 2010 |
| Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature SO Kucheyev, JS Williams, J Zou, G Li, C Jagadish, AI Titov Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 25 | 2002 |
| Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN MW Ullah, A Kuronen, K Nordlund, F Djurabekova, PA Karaseov, AI Titov Journal of Applied Physics 112 (4), 2012 | 24 | 2012 |
| Damage buildup and the molecular effect in Si bombarded with PFn cluster ions AI Titov, AY Azarov, LM Nikulina, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007 | 24 | 2007 |
| Molecular effect in semiconductors under heavy-ion bombardment: Quantitative approach based on the concept of nonlinear displacement spikes AI Titov, VS Belyakov, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 24 | 2002 |
| Damage accumulation in Si during N+ and N2+ bombardment along random and channeling directions AI Titov, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 24 | 1999 |
| Model for radiation damage buildup in GaN AI Titov, PA Karaseov, AY Kataev, AY Azarov, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012 | 23 | 2012 |
