| High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region F Wu, Q Li, P Wang, H Xia, Z Wang, Y Wang, M Luo, L Chen, F Chen, ... Nature communications 10 (1), 4663, 2019 | 242 | 2019 |
| AsP/InSe van der Waals tunneling heterojunctions with ultrahigh reverse rectification ratio and high photosensitivity F Wu, H Xia, H Sun, J Zhang, F Gong, Z Wang, L Chen, P Wang, M Long, ... Advanced Functional Materials 29 (12), 1900314, 2019 | 144 | 2019 |
| Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition M Peng, R Xie, Z Wang, P Wang, F Wang, H Ge, Y Wang, F Zhong, P Wu, ... Science Advances 7 (16), eabf7358, 2021 | 141 | 2021 |
| High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition D Zheng, H Fang, M Long, F Wu, P Wang, F Gong, X Wu, JC Ho, L Liao, ... ACS nano 12 (7), 7239-7245, 2018 | 100 | 2018 |
| A noble metal dichalcogenide for high‐performance field‐effect transistors and broadband photodetectors Z Wang, P Wang, F Wang, J Ye, T He, F Wu, M Peng, P Wu, Y Chen, ... Advanced Functional Materials 30 (5), 1907945, 2020 | 98 | 2020 |
| WSe2 Photovoltaic Device Based on Intramolecular p–n Junction Y Tang, Z Wang, P Wang, F Wu, Y Wang, Y Chen, H Wang, M Peng, ... Small 15 (12), 1805545, 2019 | 86 | 2019 |
| Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates B Janjua, H Sun, C Zhao, DH Anjum, D Priante, AA Alhamoud, F Wu, X Li, ... Optics Express 25 (2), 1381-1390, 2017 | 68 | 2017 |
| Photoinduced entropy of InGaN/GaN pin double-heterostructure nanowires N Alfaraj, S Mitra, F Wu, IA Ajia, B Janjua, A Prabaswara, RA Aljefri, H Sun, ... Applied Physics Letters 110 (16), 2017 | 66 | 2017 |
| Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at~ 350 nm via step quantum well structure design F Wu, H Sun, IA AJia, IS Roqan, D Zhang, J Dai, C Chen, ZC Feng, X Li Journal of Physics D: Applied Physics 50 (24), 245101, 2017 | 61 | 2017 |
| A Colloidal‐Quantum‐Dot Infrared Photodiode with High Photoconductive Gain Y Tang, F Wu, F Chen, Y Zhou, P Wang, M Long, W Zhou, Z Ning, J He, ... Small 14 (48), 1803158, 2018 | 48 | 2018 |
| Terahertz intersubband transition in GaN/AlGaN step quantum well F Wu, W Tian, WY Yan, J Zhang, SC Sun, JN Dai, YY Fang, ZH Wu, ... Journal of Applied Physics 113 (15), 2013 | 48 | 2013 |
| Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy B Janjua, H Sun, C Zhao, DH Anjum, F Wu, AA Alhamoud, X Li, ... Nanoscale 9 (23), 7805-7813, 2017 | 44 | 2017 |
| Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD H Long, S Wang, J Dai, F Wu, J Zhang, J Chen, R Liang, ZC Feng, ... Optics express 26 (2), 680-686, 2018 | 41 | 2018 |
| WSe2/Au vertical Schottky junction photodetector with low dark current and fast photoresponse M Luo, F Wu, M Long, X Chen Nanotechnology 29 (44), 444001, 2018 | 38 | 2018 |
| Enhanced optical and thermal performance of eutectic flip-chip ultraviolet light-emitting diodes via AlN-doped-silicone encapsulant R Liang, F Wu, S Wang, Q Chen, J Dai, C Chen IEEE Transactions on Electron Devices 64 (2), 467-471, 2016 | 36 | 2016 |
| Room-temperature blackbody-sensitive and fast infrared photodetectors based on 2D tellurium/graphene van der Waals heterojunction M Peng, Y Yu, Z Wang, X Fu, Y Gu, Y Wang, K Zhang, Z Zhang, M Huang, ... ACS Photonics 9 (5), 1775-1782, 2022 | 33 | 2022 |
| The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition J Zhang, W Tian, F Wu, Q Wan, Z Wang, J Zhang, Y Li, J Dai, Y Fang, ... Applied surface science 307, 525-532, 2014 | 32 | 2014 |
| Black phosphorus infrared photodetectors with fast response and high photoresponsivity F Gong, F Wu, M Long, F Chen, M Su, Z Yang, J Shi physica status solidi (RRL)–Rapid Research Letters 12 (12), 1800310, 2018 | 31 | 2018 |
| Influence of TMAl preflow on AlN epitaxy on sapphire H Sun, F Wu, YJ Park, KH Li, N Alfaraj, T Detchprohm, RD Dupuis, X Li Applied Physics Letters 110 (19), 2017 | 29 | 2017 |
| The advantages of AlGaN-based UV-LEDs inserted with a p-AlGaN layer between the EBL and active region J Zhang, W Tian, F Wu, W Yan, H Xiong, J Dai, Y Fang, Z Wu, C Chen IEEE photonics journal 5 (4), 1600310-1600310, 2013 | 28 | 2013 |
Peng WangShanghai Institute of Technical Physics, CAS在 mail.sitp.ac.cn 的电子邮件经过验证
