| Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors A Martinez, M Aldegunde, N Seoane, AR Brown, JR Barker, A Asenov IEEE Transactions on Electron Devices 58 (8), 2209-2217, 2011 | 84 | 2011 |
| Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations M Aldegunde, A Martinez, JR Barker IEEE Electron Device Letters 33 (2), 194-196, 2012 | 79 | 2012 |
| Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors AJ Garcia-Loureiro, N Seoane, M Aldegunde, R Valin, A Asenov, ... IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2011 | 78 | 2011 |
| Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET N Seoane, G Indalecio, E Comesaña, M Aldegunde, AJ García-Loureiro, ... IEEE Transactions on Electron Devices 61 (2), 466-472, 2014 | 61 | 2014 |
| 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors M Aldegunde, AJ Garcia-Loureiro, K Kalna IEEE Transactions on Electron Devices 60 (5), 1561-1567, 2013 | 50 | 2013 |
| Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs J Lindberg, M Aldegunde, D Nagy, WG Dettmer, K Kalna, ... IEEE Transactions on Electron Devices 61 (2), 423-429, 2014 | 48 | 2014 |
| Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ... IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016 | 46 | 2016 |
| Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect … M Aldegunde, A Martinez, A Asenov Journal of Applied Physics 110 (9), 2011 | 46 | 2011 |
| Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ... Solid-State Electronics 128, 17-24, 2017 | 44 | 2017 |
| Development of an exchange-correlation functional with uncertainty quantification capabilities for density functional theory M Aldegunde, JR Kermode, N Zabaras Journal of Computational Physics 311, 173-195, 2016 | 36 | 2016 |
| NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants A Martinez, M Aldegunde, AR Brown, S Roy, A Asenov Solid-State Electronics 71, 101-105, 2012 | 35 | 2012 |
| Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes M Aldegunde, N Seoane, AJ García-Loureiro, K Kalna Computer Physics Communications 181 (1), 24-34, 2010 | 27 | 2010 |
| Quantifying uncertainties in first-principles alloy thermodynamics using cluster expansions M Aldegunde, N Zabaras, J Kristensen Journal of Computational Physics 323, 17-44, 2016 | 24 | 2016 |
| 3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections D Nagy, MA Elmessary, M Aldegunde, R Valin, A Martinez, J Lindberg, ... IEEE Transactions on Nanotechnology 14 (1), 93-100, 2015 | 24 | 2015 |
| Statistical study of the influence of LER and MGG in SOI MOSFET G Indalecio, M Aldegunde, N Seoane, K Kalna, AJ Garcia-Loureiro Semiconductor Science and Technology 29 (4), 045005, 2014 | 23 | 2014 |
| Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor M Aldegunde, A Martinez, JR Barker Journal of applied physics 113 (1), 2013 | 22 | 2013 |
| A worst-case analysis of trap-assisted tunneling leakage in DRAM using a machine learning approach J Lee, P Asenov, M Aldegunde, SM Amoroso, AR Brown, V Moroz IEEE Electron Device Letters 42 (2), 156-159, 2020 | 20 | 2020 |
| Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In 0.53 Ga 0.47 As GAA MOSFET N Seoane, G Indalecio, E Comesaña, AJ Garcia-Loureiro, M Aldegunde, ... IEEE Electron Device Letters 34 (2), 205-207, 2013 | 20 | 2013 |
| 3D simulation study of work-function variability in a 25 nm metal-gate FinFET with curved geometry using Voronoi grains G Indalecio, AJ Garcia-Loureiro, M Aldegunde, K Kalna Proc. 17th Int. Conf. Simul. Semicond. Proc. Devices (SISPAD), 149-152, 2012 | 20 | 2012 |
| Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors MA Elmessary, D Nagy, M Aldegunde, J Lindberg, WG Dettmer, D Peric, ... IEEE Transactions on Electron Devices 63 (3), 933-939, 2016 | 19 | 2016 |
Karol KalnaProfessor在 swansea.ac.uk 的电子邮件经过验证
