Single-layer LaBr2: Two-dimensional valleytronic semiconductor with spontaneous spin and valley polarizations P Zhao, Y Ma, C Lei, H Wang, B Huang, Y Dai Applied Physics Letters 115 (26), 2019 | 145 | 2019 |
Broken-Gap Type-III Band Alignment in WTe2/HfS2 van der Waals Heterostructure C Lei, Y Ma, X Xu, T Zhang, B Huang, Y Dai The Journal of Physical Chemistry C 123 (37), 23089-23095, 2019 | 92 | 2019 |
Nonmetal-Atom-Doping-Induced Valley Polarization in Single-Layer Tl2O X Xu, Y Ma, T Zhang, C Lei, B Huang, Y Dai The Journal of Physical Chemistry Letters 10 (16), 4535-4541, 2019 | 68 | 2019 |
Prediction of two-dimensional antiferromagnetic ferroelasticity in an AgF 2 monolayer X Xu, Y Ma, T Zhang, C Lei, B Huang, Y Dai Nanoscale Horizons 5 (10), 1386-1393, 2020 | 62 | 2020 |
Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties T Zhang, Y Ma, X Xu, C Lei, B Huang, Y Dai The Journal of Physical Chemistry Letters 11 (2), 497-503, 2019 | 44 | 2019 |
Valley polarization in monolayer CrX2 (X= S, Se) with magnetically doping and proximity coupling C Lei, Y Ma, T Zhang, X Xu, B Huang, Y Dai New Journal of Physics 22 (3), 033002, 2020 | 38 | 2020 |
Nonvolatile Controlling Valleytronics by Ferroelectricity in 2H-VSe2/Sc2CO2 van der Waals Heterostructure C Lei, X Xu, T Zhang, B Huang, Y Dai, Y Ma The Journal of Physical Chemistry C 125 (4), 2802-2809, 2021 | 32 | 2021 |
Two-dimensional valleytronics in single-layer t-ZrNY (Y= Cl, Br) predicted from first principles T Zhang, Y Ma, X Xu, C Lei, B Huang, Y Dai The Journal of Physical Chemistry C 124 (37), 20598-20604, 2020 | 23 | 2020 |
Reversible nonvolatile control of anomalous valley Hall effect in a multiferroic van der Waals heterostructure C Lei, X Li, Y Ma, Z Qian Physical Review B 108 (15), 155431, 2023 | 16 | 2023 |
Tl2O/WTe2 van der Waals heterostructure with tunable multiple band alignments Z He, Y Ma, C Lei, R Peng, B Huang, Y Dai The Journal of Chemical Physics 152 (7), 2020 | 8 | 2020 |
Controllable dual-polarization valley physics in the strain-engineered 2D monolayer of VC 2 N 4 C Lei, S Cao, Z Gong, X Li, Y Ma, J Gao, J Bi, R Ahuja, Z Qian Journal of Materials Chemistry C 12 (6), 2156-2164, 2024 | 2 | 2024 |