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kaitian zhang
kaitian zhang
在 osu.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Laser‐assisted metal–organic chemical vapor deposition of gallium nitride
Y Zhang, Z Chen, K Zhang, Z Feng, H Zhao
physica status solidi (RRL)–Rapid Research Letters 15 (6), 2100202, 2021
212021
Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8
K Zhang, VGT Vangipuram, HL Huang, J Hwang, H Zhao
Advanced Electronic Materials, 2300550, 2023
82023
Band Structure Engineering Based on InGaN/ZnGeN2 Heterostructure Quantum Wells for Visible Light Emitters
MR Karim, BH Dinushi Jayatunga, K Zhang, M Zhu, J Hwang, K Kash, ...
Crystal Growth & Design 22 (1), 131-139, 2021
72021
Investigation of carbon incorporation in laser-assisted MOCVD of GaN
Y Zhang, VG Thirupakuzi Vangipuram, K Zhang, H Zhao
Applied Physics Letters 122 (16), 2023
62023
Pulsed-Mode MOCVD Growth of ZnSn(Ga)N2 and Determination of the Valence Band Offset with GaN
K Zhang, C Hu, AFMAU Bhuiyan, M Zhu, VGT Vangipuram, MR Karim, ...
Crystal Growth & Design 22 (8), 5004-5011, 2022
32022
Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes
K Zhang, C Hu, VG Thirupakuzi Vangipuram, K Kash, H Zhao
Journal of Vacuum Science & Technology A 41 (3), 2023
12023
Atomic Scale Defect Formation and Evolution at LiGa5O8/β-Ga2O3 and Ga2O3/Ni/Au Interfaces
C Chae, K Zhang, D Ramdin, VGT Vangipuram, LJ Brillson, H Zhao, ...
Microscopy and Microanalysis 30 (Supplement_1), ozae044. 529, 2024
2024
Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2
VG Thirupakuzi Vangipuram, K Zhang, H Zhao
Journal of Vacuum Science & Technology B 42 (3), 2024
2024
Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface
K Zhang, VG Thirupakuzi Vangipuram, C Chae, J Hwang, H Zhao
Applied Physics Letters 124 (12), 2024
2024
Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates
VG Thirupakuzi Vangipuram, K Zhang, H Zhao
physica status solidi (RRL)–Rapid Research Letters 18 (3), 2300318, 2024
2024
Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits
K Zhang, C Hu, VG Thirupakuzi Vangipuram, L Meng, C Chae, M Zhu, ...
Journal of Vacuum Science & Technology B 41 (6), 2023
2023
Discovery of a Robust P-Type Ultrawide Bandgap Oxide Semiconductor: LiGa
K Zhang, VGT Vangipuram, HL Huang, J Hwang, H Zhao
2023
(Invited) Developments of Wbg GaN-on-GaN Vertical Power Devices & Uwbg Ga2O3, Algao, and Heterostructures
H Zhao, Y Zhang, Z Feng, AFMAU Bhuiyan, L Meng, K Zhang, MR Karim
Electrochemical Society Meeting Abstracts 240, 961-961, 2021
2021
Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN
Y Zhang, Z Chen, K Zhang, Z Feng, H Zhao
arXiv preprint arXiv:2104.01064, 2021
2021
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