| The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs R Vetury, NQ Zhang, S Keller, UK Mishra IEEE Transactions on electron devices 48 (3), 560-566, 2001 | 1767 | 2001 |
| Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ... Applied physics letters 68 (5), 643-645, 1996 | 1094 | 1996 |
| “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ... Applied Physics Letters 73 (10), 1370-1372, 1998 | 868 | 1998 |
| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 841 | 2006 |
| Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ... Applied Physics Letters 72 (6), 692-694, 1998 | 600 | 1998 |
| AlGaN/AlN/GaN high-power microwave HEMT L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ... IEEE Electron Device Letters 22 (10), 457-459, 2001 | 599 | 2001 |
| High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005 | 583 | 2005 |
| Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ... Applied Physics Letters 73 (14), 2006-2008, 1998 | 577 | 1998 |
| Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ... Journal of applied physics 80 (6), 3228-3237, 1996 | 565 | 1996 |
| High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra IEEE Electron Device Letters 27 (9), 713-715, 2006 | 550 | 2006 |
| Electrical characterization of GaN junctions with and without threading dislocations P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ... Applied physics letters 73 (7), 975-977, 1998 | 482 | 1998 |
| Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ... Acta Materialia 61 (3), 945-951, 2013 | 480 | 2013 |
| Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition S Heikman, S Keller, SP DenBaars, UK Mishra Applied Physics Letters 81 (3), 439-441, 2002 | 480 | 2002 |
| AlGaN/GaN high electron mobility transistors with InGaN back-barriers T Palacios, A Chakraborty, S Heikman, S Keller, SP DenBaars, UK Mishra IEEE Electron device letters 27 (1), 13-15, 2005 | 477 | 2005 |
| High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra IEEE Electron Device Letters 25 (4), 161-163, 2004 | 477 | 2004 |
| Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire D Kapolnek, XH Wu, B Heying, S Keller, BP Keller, UK Mishra, ... Applied Physics Letters 67 (11), 1541-1543, 1995 | 448 | 1995 |
| Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors YF Wu, BP Keller, S Keller, D Kapolnek, P Kozodoy, SP Denbaars, ... Applied physics letters 69 (10), 1438-1440, 1996 | 442 | 1996 |
| High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN G Parish, S Keller, P Kozodoy, JP Ibbetson, H Marchand, PT Fini, ... Applied Physics Letters 75 (2), 247-249, 1999 | 424 | 1999 |
| AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, L Chen, T Mates, L Shen, S Heikman, B Moran, S Keller, ... Journal of Applied Physics 90 (10), 5196-5201, 2001 | 423 | 2001 |
| Anisotropic epitaxial lateral growth in GaN selective area epitaxy D Kapolnek, S Keller, R Vetury, RD Underwood, P Kozodoy, ... Applied Physics Letters 71 (9), 1204-1206, 1997 | 422 | 1997 |
