| 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3MOSFETs K Zeng, A Vaidya, U Singisetti IEEE Electron Device Letters 39 (9), 1385-1388, 2018 | 229 | 2018 |
| Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage S Sharma, K Zeng, S Saha, U Singisetti IEEE Electron Device Letters 41 (6), 836-839, 2020 | 208 | 2020 |
| Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology K Zeng, JS Wallace, C Heimburger, K Sasaki, A Kuramata, T Masui, ... IEEE Electron Device Letters 38 (4), 513-516, 2017 | 147 | 2017 |
| Device-Level thermal management of gallium oxide field-effect transistors B Chatterjee, K Zeng, CD Nordquist, U Singisetti, S Choi IEEE Transactions on Components, Packaging and Manufacturing Technology 9 …, 2019 | 127 | 2019 |
| Interface State Density in Atomic Layer Deposited SiO2/-Ga2O3() MOSCAPs K Zeng, Y Jia, U Singisetti IEEE Electron Device Letters 37 (7), 906-909, 2016 | 112 | 2016 |
| Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2¯ 01) Y Jia, K Zeng, JS Wallace, JA Gardella, U Singisetti Applied Physics Letters 106 (10), 2015 | 106 | 2015 |
| A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance K Zeng, A Vaidya, U Singisetti Applied Physics Express 12 (8), 081003, 2019 | 84 | 2019 |
| Flexible β‐Ga2O3 Nanomembrane Schottky Barrier Diodes E Swinnich, MN Hasan, K Zeng, Y Dove, U Singisetti, B Mazumder, ... Advanced Electronic Materials 5 (3), 1800714, 2019 | 65 | 2019 |
| Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations K Zeng, U Singisetti Applied Physics Letters 111 (12), 2017 | 52 | 2017 |
| Designing Beveled Edge Termination in GaN Vertical pin Diode-Bevel Angle, Doping, and Passivation K Zeng, S Chowdhury IEEE Transactions on Electron Devices 67 (6), 2457-2462, 2020 | 35 | 2020 |
| Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer K Zeng, R Soman, Z Bian, S Jeong, S Chowdhury IEEE Electron Device Letters 43 (9), 1527-1530, 2022 | 32 | 2022 |
| 2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer Z Bian, K Zeng, S Chowdhury IEEE Electron Device Letters 43 (4), 596-599, 2022 | 26 | 2022 |
| Depletion and enhancement mode β-Ga 2 O 3 MOSFETs with ALD SiO 2 gate and near 400 V breakdown voltage K Zeng, K Sasaki, A Kuramata, T Masui, U Singisetti 74th Device Research Conference (DRC), 1-2, 2016 | 24 | 2016 |
| A field-plated Ga₂O₃ MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm² on-resistance K Zeng, A Vaidya, U Singisetti Appl. Phys. Exp. 12 (8), 2019 | 20 | 2019 |
| Modeling and power loss evaluation of ultra wide band gap Ga2O3 device for high power applications I Lee, A Kumar, K Zeng, U Singisetti, X Yao Energy Conversion Congress and Exposition (ECCE), 2017 IEEE, 4377-4382, 2017 | 16 | 2017 |
| Mixed-mode circuit simulation to characterize Ga2O3 MOSFETs in different device structures I Lee, A Kumar, K Zeng, U Singisetti, X Yao 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 15 | 2017 |
| Interface characterization of atomic layer deposited high-k on non-polar GaN Y Jia, K Zeng, U Singisetti Journal of Applied Physics 122 (15), 2017 | 15 | 2017 |
| Study on Avalanche Uniformity in 1.2 KV GaN Vertical PIN Diode with Bevel Edge-Termination K Zeng, S Chowdhury, B Gunning, R Kaplar, T Anderson 2021 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2021 | 12 | 2021 |
| Development of High-Voltage Vertical GaN PN Diodes RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020 | 11 | 2020 |
| Study of Avalanche Behavior in 3 kV GaN Vertical PN Diode Under UIS Stress for Edge-termination Optimization B Shankar, Z Bian, K Zeng, C Meng, RP Martinez, S Chowdhury, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-4, 2022 | 7 | 2022 |
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)在 buffalo.edu 的电子邮件经过验证
