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Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ... Applied Physics Letters 85 (5), 704-706, 2004 | 338 | 2004 |
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes K McGroddy, A David, E Matioli, M Iza, S Nakamura, S DenBaars, ... Applied physics letters 93 (10), 2008 | 278* | 2008 |
An enhanced color shift keying modulation scheme for high-speed wireless visible light communications R Singh, T O’Farrell, JPR David Journal of Lightwave Technology 32 (14), 2582-2592, 2014 | 179 | 2014 |
Design and performance of an InGaAs-InP single-photon avalanche diode detector S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ... IEEE journal of quantum electronics 42 (4), 397-403, 2006 | 179 | 2006 |
Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes KF Li, DS Ong, JPR David, GJ Rees, RC Tozer, PN Robson, R Grey IEEE Transactions on Electron Devices 45 (10), 2102-2107, 1998 | 161 | 1998 |
Room-temperature 1.6 μm light emission from InAs∕ GaAs quantum dots with a thin GaAsSb cap layer HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suarez, ... Journal of applied physics 99 (4), 2006 | 128 | 2006 |
Temperature dependence of impact ionization in submicrometer silicon devices DJ Massey, JPR David, GJ Rees IEEE Transactions on Electron Devices 53 (9), 2328-2334, 2006 | 123 | 2006 |
Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P MC DeLong, DJ Mowbray, RA Hogg, MS Skolnick, M Hopkinson, ... Journal of applied physics 73 (10), 5163-5172, 1993 | 116 | 1993 |
A simple model to determine multiplication and noise in avalanche photodiodes DS Ong, KF Li, GJ Rees, JPR David, PN Robson Journal of applied physics 83 (6), 3426-3428, 1998 | 111 | 1998 |
Influences of the spacer layer growth temperature on multilayer InAs∕ GaAs quantum dot structures HY Liu, IR Sellers, M Gutierrez, KM Groom, WM Soong, M Hopkinson, ... Journal of applied physics 96 (4), 1988-1992, 2004 | 107 | 2004 |
Impact ionization coefficients in 4H-SiC WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ... IEEE Transactions on electron devices 55 (8), 1984-1990, 2008 | 106 | 2008 |
Excess avalanche noise in In0. 52Al0. 48As YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson IEEE journal of quantum electronics 43 (5-6), 503-507, 2007 | 104 | 2007 |
Localization effects and band gap of GaAsBi alloys AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ... physica status solidi (b) 251 (6), 1276-1281, 2014 | 102 | 2014 |
A Monte Carlo investigation of multiplication noise in thin p/sup+/-in/sup+/GaAs avalanche photodiodes DS Ong, KF Li, GJ Rees, GM Dunn, JPR David, PN Robson IEEE Transactions on Electron Devices 45 (8), 1804-1810, 1998 | 102 | 1998 |
Temperature dependence of avalanche breakdown in InP and InAlAs LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010 | 96 | 2010 |
Nonlocal effects in thin 4H-SiC UV avalanche photodiodes BK Ng, JPR David, RC Tozer, GJ Rees, F Yan, JH Zhao, M Weiner IEEE Transactions on Electron Devices 50 (8), 1724-1732, 2003 | 93 | 2003 |
Investigation of impact ionization in thin GaAs diodes SA Plimmer, JPR David, DC Herbert, TW Lee, GJ Rees, PA Houston, ... IEEE Transactions on Electron Devices 43 (7), 1066-1072, 1996 | 89 | 1996 |
Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111) B GaAs AS Pabla, JL Sanchez‐Rojas, J Woodhead, R Grey, JPR David, GJ Rees, ... Applied physics letters 63 (6), 752-754, 1993 | 88 | 1993 |
Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes ARJ Marshall, CH Tan, MJ Steer, JPR David Applied Physics Letters 93 (11), 2008 | 86 | 2008 |