| Sublimation bed employing carrier gas guidance structures EJ Shero, ME Givens, R Schmidt US Patent 7,122,085, 2006 | 529 | 2006 |
| System and method for gas-phase sulfur passivation of a semiconductor surface F Tang, ME Givens, Q Xie, P Raisanen US Patent 9,558,931, 2017 | 481 | 2017 |
| Semiconductor device dielectric interface layer P Raisanen, M Givens, M Verghese US Patent 8,728,832, 2014 | 465 | 2014 |
| Systems and methods for dynamic semiconductor process scheduling KR Lawson, ME Givens US Patent 9,659,799, 2017 | 461 | 2017 |
| Semiconductor device dielectric interface layer P Raisanen, M Givens, M Verghese US Patent 9,177,784, 2015 | 457 | 2015 |
| Method for forming metal chalcogenide thin films on a semiconductor device F Tang, ME Givens, JH Woodruff, Q Xie, JW Maes US Patent 9,711,396, 2017 | 400 | 2017 |
| System and method for gas-phase passivation of a semiconductor surface F Tang, ME Givens, Q Xie, P Raisanen US Patent 9,905,492, 2018 | 396 | 2018 |
| System and method for gas-phase passivation of a semiconductor surface F Tang, ME Givens, Q Xie, X Jiang, P Raisanen, P Calka US Patent 9,911,676, 2018 | 395 | 2018 |
| Sulfur-containing thin films SP Haukka, F Tang, M Givens, JW Maes, Q Xie US Patent 9,245,742, 2016 | 395 | 2016 |
| Sulfur-containing thin films SP Haukka, F Tang, M Givens, JW Maes, Q Xie US Patent 9,478,419, 2016 | 394 | 2016 |
| Methods for forming a semiconductor device and related semiconductor device structures Q Xie, ME Givens, P Raisanen, JW Maes US Patent 10,643,904, 2020 | 393 | 2020 |
| Structures including metal carbide material, devices including the structures, and methods of forming same P Raisanen, M Givens, EJ Shero US Patent 10,458,018, 2019 | 390 | 2019 |
| Methods for semiconductor passivation by nitridation Q Xie, F Tang, M Givens, P Raisanen, JW Maes US Patent 9,711,350, 2017 | 388 | 2017 |
| Deposition of metal borides and silicides P Raisanen, E Shero, S Haukka, RB Milligan, ME Givens US Patent 10,865,475, 2020 | 386 | 2020 |
| Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures P Raisanen, ME Givens US Patent 10,229,833, 2019 | 385 | 2019 |
| Method for passivating a surface of a semiconductor and related systems X Jiang, F Tang, Q Xie, P Calka, SH Jung, ME Givens US Patent 10,410,943, 2019 | 384 | 2019 |
| Deposition of metal borides P Raisanen, E Shero, S Haukka, RB Milligan, ME Givens US Patent 10,087,522, 2018 | 384 | 2018 |
| Source/drain performance through conformal solid state doping Q Xie, D De Roest, J Woodruff, ME Givens, JW Maes, T Blanquart US Patent 10,032,628, 2018 | 384 | 2018 |
| Implementing atomic layer deposition for gate dielectrics F Tang, X Jiang, Q Xie, ME Givens, JW Maes, J Chen US Patent App. 15/286,503, 2017 | 384 | 2017 |
| Reaction chamber M Givens, M Goodman, M Hawkins, B Halleck, H Terhorst US Patent App. 12/613,436, 2010 | 383 | 2010 |
