| Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures VA Timofeev, AI Nikiforov, AR Tuktamyshev, VI Mashanov, ID Loshkarev, ... Nanotechnology 29 (15), 154002, 2018 | 37 | 2018 |
| High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots S Bietti, FB Basset, A Tuktamyshev, E Bonera, A Fedorov, S Sanguinetti Scientific Reports 10 (1), 6532, 2020 | 32 | 2020 |
| Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers V Timofeev, A Nikiforov, A Tuktamyshev, V Mashanov, M Yesin, ... Nanoscale Research Letters 13, 1-8, 2018 | 24 | 2018 |
| Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution F Basso Basset, S Bietti, A Tuktamyshev, S Vichi, E Bonera, S Sanguinetti Journal of Applied Physics 126 (2), 2019 | 21 | 2019 |
| Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates A Tuktamyshev, A Fedorov, S Bietti, S Vichi, KD Zeuner, KD Jöns, ... Applied Physics Letters 118 (13), 2021 | 17 | 2021 |
| Temperature activated dimensionality crossover in the nucleation of quantum dots by droplet epitaxy on GaAs (111) A vicinal substrates A Tuktamyshev, A Fedorov, S Bietti, S Tsukamoto, S Sanguinetti Scientific Reports 9 (1), 14520, 2019 | 17 | 2019 |
| Splitting of frequencies of optical phonons in tensile-strained germanium layers VA Volodin, VA Timofeev, AR Tuktamyshev, AI Nikiforov JETP Letters 105, 327-331, 2017 | 16 | 2017 |
| Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate L Anzi, A Tuktamyshev, A Fedorov, A Zurutuza, S Sanguinetti, R Sordan npj 2D Materials and Applications 6 (1), 28, 2022 | 8 | 2022 |
| Strained multilayer structures with pseudomorphic GeSiSn layers VA Timofeev, AI Nikiforov, AR Tuktamyshev, MY Yesin, VI Mashanov, ... Semiconductors 50, 1584-1588, 2016 | 8 | 2016 |
| Nucleation of Ga droplets self-assembly on GaAs (111) A substrates A Tuktamyshev, A Fedorov, S Bietti, S Vichi, R Tambone, S Tsukamoto, ... Scientific Reports 11 (1), 6833, 2021 | 7 | 2021 |
| Reentrant behavior of the density vs. temperature of indium islands on GaAs (111) A A Tuktamyshev, A Fedorov, S Bietti, S Tsukamoto, R Bergamaschini, ... Nanomaterials 10 (8), 1512, 2020 | 6 | 2020 |
| Growth of epitaxial SiSn films with high Sn content for IR converters VA Timofeev, AI Nikiforov, AP Kokhanenko, AR Tuktamyshev, ... Russian Physics Journal 60, 354-359, 2017 | 6 | 2017 |
| Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si (100) AI Nikiforov, VA Timofeev, AR Tuktamyshev, AI Yakimov, VI Mashanov, ... Journal of Crystal Growth 457, 215-219, 2017 | 6 | 2017 |
| Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy AR Tuktamyshev, VI Mashanov, VA Timofeev, AI Nikiforov, SA Teys Semiconductors 49, 1582-1586, 2015 | 4 | 2015 |
| Exciton Fine Structure in Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a (111) Vicinal Substrate A Barbiero, A Tuktamyshev, G Pirard, J Huwer, T Müller, RM Stevenson, ... Physical Review Applied 18 (3), 034081, 2022 | 3 | 2022 |
| Flat metamorphic InAlAs buffer layer on GaAs (111) A misoriented substrates by growth kinetics control A Tuktamyshev, S Vichi, F Cesura, A Fedorov, S Bietti, D Chrastina, ... Journal of Crystal Growth 600, 126906, 2022 | 2 | 2022 |
| Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs (111) Metamorphic Substrates A Tuktamyshev, S Vichi, FG Cesura, A Fedorov, G Carminati, D Lambardi, ... Nanomaterials 12 (20), 3571, 2022 | 2 | 2022 |
| Optically controlled dual-band quantum dot infrared photodetector S Vichi, S Bietti, FB Basset, A Tuktamyshev, A Fedorov, S Sanguinetti Nanomaterials and Nanotechnology 12, 18479804221085790, 2022 | 2 | 2022 |
| Formation of a stepped Si (100) surface and its effect on the growth of Ge islands MY Yesin, AI Nikiforov, VA Timofeev, AR Tuktamyshev, VI Mashanov, ... Fizika i Tekhnika Poluprovodnikov 52 (3), 409-413, 2018 | 2 | 2018 |
| Valence-band offsets in strained SiGeSn/Si layers with different tin contents AA Bloshkin, AI Yakimov, VA Timofeev, AR Tuktamyshev, AI Nikiforov, ... Semiconductors 51, 329-334, 2017 | 2 | 2017 |
