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Frâncio Rodrigues
Frâncio Rodrigues
其他姓名F. Rodrigues, F. S. B. Rodrigues
PhD at the Institute for Microelectronics, TU Wien
在 tuwien.ac.at 的电子邮件经过验证
标题
引用次数
引用次数
年份
Continuum level-set model for anisotropic wet etching of patterned sapphire substrates
A Toifl, F Rodrigues, LF Aguinsky, A Hössinger, J Weinbub
Semiconductor Science and Technology 36 (4), 045016, 2021
92021
Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching
F Rodrigues, LF Aguinsky, A Toifl, A Scharinger, A Hössinger, J Weinbub
2021 International Conference on Simulation of Semiconductor Processes and …, 2021
62021
Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon
LF Aguinsky, F Rodrigues, G Wachter, M Trupke, U Schmid, A Hössinger, ...
Solid-State Electronics 191, 108262, 2022
52022
Fabrication and characterization of a pH sensor
F Rodrigues, HI Boudinov
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2017
52017
Modeling incomplete conformality during atomic layer deposition in high aspect ratio structures
LF Aguinsky, F Rodrigues, T Reiter, X Klemenschits, L Filipovic, ...
Solid-State Electronics 201, 108584, 2023
32023
Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations
C Lenz, A Toifl, M Quell, F Rodrigues, A Hössinger, J Weinbub
Solid-State Electronics 191, 108258, 2022
32022
Modeling and analysis of sulfur hexafluoride plasma etching for silicon microcavity resonators
LF Aguinsky, G Wachter, P Manstetten, F Rodrigues, M Trupke, U Schmid, ...
Journal of Micromechanics and Microengineering 31 (12), 125003, 2021
32021
Anomalous Current–Voltage Behavior in Al/TiO2/n‐Si Structures
RAZ Razera, HI Boudinov, FSB Rodrigues, RZ Ferreira, AF Feil
physica status solidi (RRL)–Rapid Research Letters 12 (6), 1800057, 2018
32018
MEIS, TEM and GISAXS investigation of buried Pb nanoislands in SiO2/Si interface
DF Sanchez, F Rodrigues, FP Luce, ZE Fabrim, GM Azevedo, ...
Applied surface science 321, 80-85, 2014
22014
Modeling the impact of incomplete conformality during atomic layer processing
T Reiter, LF Aguinsky, F Rodrigues, J Weinbub, A Hössinger, L Filipovic
Solid-State Electronics 211, 108816, 2024
12024
Modeling Non-Ideal Conformality during Atomic Layer Deposition in High Aspect Ratio Structures
LF Aguinsky, F Rodrigues, T Reiter, X Klemenschits, L Filipovic, ...
arXiv preprint arXiv:2210.00749, 2022
12022
Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si
LF Aguinsky, G Wachter, F Rodrigues, A Scharinger, A Toifl, M Trupke, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
12021
Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena
F Rodrigues, LF Aguinsky, A Toifl, A Hössinger, J Weinbub
Book of Abstracts of the International Workshop on Computational …, 2021
12021
3D modeling of feature-scale fluorocarbon plasma etching in silica
F Rodrigues, L Felipe Aguinsky, C Lenz, A Hössinger, J Weinbub
Journal of Computational Electronics 22 (5), 1558-1563, 2023
2023
A Modern Formulation of Knudsen Diffusion with Applications to Nanofabrication
LF Aguinsky, A Toifl, F Rodrigues, A Hössinger, J Weinbub
2023 IEEE 23rd International Conference on Nanotechnology (NANO), 270-275, 2023
2023
Automatic grid refinement for thin material layer etching in process TCAD simulations
C Lenz, P Manstetten, LF Aguinsky, F Rodrigues, A Hössinger, J Weinbub
Solid-State Electronics 200, 108534, 2023
2023
3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching
F Rodrigues, LF Aguinsky, A Hössinger, J Weinbub
SISPAD 2022: International Conference on Simulation of Semiconductor …, 2022
2022
Fabrication of ion sensitive field effect transistors
FSB Rodrigues
2018
Photo and electroluminescence from SiNx layers deposited by reactive sputtering
G Sombrio, F Rodrigues, PL Franzen, PA Soave, HI Boudinov
2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2015
2015
Fabricação e caracterização de dispositivos eletroluminescentes de nitreto de silício depositado por sputtering reativo
FSB Rodrigues
2015
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