| Size and shape engineering of vertically stacked self-assembled quantum dots ZR Wasilewski, S Fafard, JP McCaffrey Journal of crystal growth 201, 1131-1135, 1999 | 495 | 1999 |
| Quantum dot infrared photodetectors HC Liu, M Gao, J McCaffrey, ZR Wasilewski, S Fafard Applied Physics Letters 78 (1), 79-81, 2001 | 406 | 2001 |
| Red-emitting semiconductor quantum dot lasers S Fafard, K Hinzer, S Raymond, M Dion, J McCaffrey, Y Feng, ... Science 274 (5291), 1350-1353, 1996 | 396 | 1996 |
| Nanocrystalline-silicon superlattice produced by controlled recrystallization L Tsybeskov, KD Hirschman, SP Duttagupta, M Zacharias, PM Fauchet, ... Applied Physics Letters 72 (1), 43-45, 1998 | 353 | 1998 |
| Radiation attenuation by lead and nonlead materials used in radiation shielding garments JP McCaffrey, H Shen, B Downton, E Mainegra‐Hing Medical physics 34 (2), 530-537, 2007 | 352 | 2007 |
| Ordering and self-organization in nanocrystalline silicon GF Grom, DJ Lockwood, JP McCaffrey, HJ Labbe, PM Fauchet, B White Jr, ... Nature 407 (6802), 358-361, 2000 | 314 | 2000 |
| film thickness metrology by x-ray photoelectron spectroscopy ZH Lu, JP McCaffrey, B Brar, GD Wilk, RM Wallace, LC Feldman, SP Tay Applied Physics Letters 71 (19), 2764-2766, 1997 | 291 | 1997 |
| Surface damage formation during ion-beam thinning of samples for transmission electron microscopy JP McCaffrey, MW Phaneuf, LD Madsen Ultramicroscopy 87 (3), 97-104, 2001 | 283 | 2001 |
| Manipulating the energy levels of semiconductor quantum dots S Fafard, ZR Wasilewski, CN Allen, D Picard, M Spanner, JP McCaffrey, ... Physical Review B 59 (23), 15368, 1999 | 267 | 1999 |
| InAs self‐assembled quantum dots on InP by molecular beam epitaxy S Fafard, Z Wasilewski, J McCaffrey, S Raymond, S Charbonneau Applied Physics Letters 68 (7), 991-993, 1996 | 244 | 1996 |
| Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness JA Gupta, D Landheer, JP McCaffrey, GI Sproule Applied Physics Letters 78 (12), 1718-1720, 2001 | 132 | 2001 |
| Radiation shielding materials and radiation scatter effects for interventional radiology (IR) physicians JP McCaffrey, F Tessier, H Shen Medical physics 39 (7Part1), 4537-4546, 2012 | 129 | 2012 |
| Optimizing non‐Pb radiation shielding materials using bilayers JP McCaffrey, E Mainegra‐Hing, H Shen Medical physics 36 (12), 5586-5594, 2009 | 129 | 2009 |
| Coupled InAs/GaAs quantum dots with well-defined electronic shells S Fafard, M Spanner, JP McCaffrey, ZR Wasilewski Applied Physics Letters 76 (16), 2268-2270, 2000 | 102 | 2000 |
| Quantum‐well intermixing for optoelectronic integration using high energy ion implantation S Charbonneau, PJ Poole, PG Piva, GC Aers, ES Koteles, M Fallahi, ... Journal of applied physics 78 (6), 3697-3705, 1995 | 99 | 1995 |
| Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substrates MW Denhoff, JP McCaffrey Journal of applied physics 70 (7), 3986-3988, 1991 | 94 | 1991 |
| Characterization of Gd2 O 3 Films Deposited on Si (100) by Electron-Beam Evaporation D Landheer, JA Gupta, GI Sproule, JP McCaffrey, MJ Graham, KC Yang, ... Journal of the Electrochemical Society 148 (2), G29, 2001 | 93 | 2001 |
| Improved TEM samples of semiconductors prepared by a small‐angle cleavage technique JP McCaffrey Microscopy Research and Technique 24 (2), 180-184, 1993 | 93 | 1993 |
| Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots PJ Poole, J McCaffrey, RL Williams, J Lefebvre, D Chithrani Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 91 | 2001 |
| Small-angle cleavage of semiconductors for transmission electron microscopy JP McCaffrey Ultramicroscopy 38 (2), 149-157, 1991 | 88 | 1991 |
