| Engineered materials for all-optical helicity-dependent magnetic switching S Mangin, M Gottwald, CH Lambert, D Steil, V Uhlíř, L Pang, M Hehn, ... Nature materials 13 (3), 286-292, 2014 | 670 | 2014 |
| Light-induced magnetization reversal of high-anisotropy TbCo alloy films S Alebrand, M Gottwald, M Hehn, D Steil, M Cinchetti, D Lacour, ... Applied Physics Letters 101 (16), 2012 | 211 | 2012 |
| Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang US Patent 20170186942A1, 2017 | 108 | 2017 |
| Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang US Patent 9,634,237, 2017 | 106 | 2017 |
| Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang US Patent 9,634,237, 2017 | 106 | 2017 |
| Strong perpendicular magnetic anisotropy in Ni/Co (111) single crystal superlattices S Girod, M Gottwald, S Andrieu, S Mangin, J McCord, EE Fullerton, ... Applied Physics Letters 94 (26), 2009 | 77 | 2009 |
| Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015 | 71 | 2015 |
| Subpicosecond magnetization dynamics in TbCo alloys S Alebrand, U Bierbrauer, M Hehn, M Gottwald, O Schmitt, D Steil, ... Physical Review B 89 (14), 144404, 2014 | 69 | 2014 |
| Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM M Gottwald, JJ Kan, K Lee, X Zhu, C Park, SH Kang Applied Physics Letters 106 (3), 2015 | 68 | 2015 |
| Co/Ni multilayers for spintronics: High spin polarization and tunable magnetic anisotropy S Andrieu, T Hauet, M Gottwald, A Rajanikanth, L Calmels, AM Bataille, ... Physical Review Materials 2 (6), 064410, 2018 | 57 | 2018 |
| Magnetoresistive effects in perpendicularly magnetized Tb-Co alloy based thin films and spin valves M Gottwald, M Hehn, F Montaigne, D Lacour, G Lengaigne, S Suire, ... Journal of Applied Physics 111 (8), 2012 | 55 | 2012 |
| Co/Ni (111) superlattices studied by microscopy, x-ray absorption, and ab initio calculations M Gottwald, S Andrieu, F Gimbert, E Shipton, L Calmels, C Magen, ... Physical Review B 86 (1), 014425, 2012 | 54 | 2012 |
| Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications G Hu, JJ Nowak, MG Gottwald, SL Brown, B Doris, CP D’Emic, P Hashemi, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.6. 1-2.6. 4, 2019 | 52 | 2019 |
| Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond C Park, JJ Kan, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.2. 1-26.2. 4, 2015 | 48 | 2015 |
| Ultra-thin Co/Pd multilayers with enhanced high-temperature annealing stability M Gottwald, K Lee, JJ Kan, B Ocker, J Wrona, S Tibus, J Langer, SH Kang, ... Applied Physics Letters 102 (5), 2013 | 48 | 2013 |
| State diagram of nanopillar spin valves with perpendicular magnetic anisotropy S Le Gall, J Cucchiara, M Gottwald, C Berthelot, CH Lambert, Y Henry, ... Physical Review B 86 (1), 014419, 2012 | 38 | 2012 |
| 2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction G Hu, G Lauer, JZ Sun, P Hashemi, C Safranski, SL Brown, L Buzi, ... 2021 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2021 | 28 | 2021 |
| Paramagnetic FexTa1-x alloys for engineering of perpendicularly magnetized tunnel junctions M Gottwald, JJ Kan, K Lee, SH Kang, EE Fullerton APL Materials 1 (2), 2013 | 25 | 2013 |
| Asymmetric magnetization reversal in dipolarly coupled spin valve structures with perpendicular magnetic anisotropy M Gottwald, M Hehn, D Lacour, T Hauet, F Montaigne, S Mangin, ... Physical Review B 85 (6), 064403, 2012 | 24 | 2012 |
| Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400° C-compatible p-MTJs G Hu, MG Gottwald, Q He, JH Park, G Lauer, JJ Nowak, SL Brown, ... 2017 IEEE International Electron Devices Meeting (IEDM), 38.3. 1-38.3. 4, 2017 | 21 | 2017 |
Stephane ManginInstitut Jean Lamour / Universite de Lorraine在 univ-lorraine.fr 的电子邮件经过验证
