Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers C Holder, JS Speck, SP DenBaars, S Nakamura, D Feezell Applied Physics Express 5 (9), 092104, 2012 | 186 | 2012 |
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ... Applied Physics Express 3 (1), 011002, 2009 | 119 | 2009 |
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching CO Holder, JT Leonard, RM Farrell, DA Cohen, B Yonkee, JS Speck, ... Applied Physics Letters 105 (3), 2014 | 82 | 2014 |
Method for the reuse of gallium nitride epitaxial substrates CO Holder, DF Feezell, SP DenBaars, S Nakamura US Patent 8,866,149, 2014 | 62 | 2014 |
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes MT Hardy, CO Holder, DF Feezell, S Nakamura, JS Speck, DA Cohen, ... Applied Physics Letters 103 (8), 2013 | 60 | 2013 |
Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser CO Holder, DF Feezell, SP DenBaars, JS Speck, S Nakamura US Patent 9,136,673, 2015 | 57 | 2015 |
Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers C Holder, D Feezell, JS Speck, SP DenBaars, S Nakamura Vertical-Cavity Surface-Emitting Lasers XVII 8639, 37-46, 2013 | 13 | 2013 |
METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES CO Holder, DF Feezell, SP Denbaars, S Nakamura US Patent 20,150,048,381, 2015 | 6 | 2015 |
Nonpolar Gallium Nitride-based VCSELs CO Holder University of California, Santa Barbara, 2013 | 4 | 2013 |
Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser CO Holder, DF Feezell, SP DenBaars, JS Speck, S Nakamura US Patent 9,640,947, 2017 | | 2017 |
Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes MT Hardy, CO Holder, S Nakamura, JS Speck, DA Cohen, SP DenBaars CLEO: 2013, 1-2, 2013 | | 2013 |
Demonstration of True Green ITO Clad Semipolar (202̅1) InGaN/GaN Laser Diodes M Hardy, CO Holder, S Nakamura, JS Speck, DA Cohen, SP DenBaars CLEO: Science and Innovations, CF1F. 1, 2013 | | 2013 |
Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes DA Haeger, C Holder, RM Farrell, PS Hsu, KM Kelchner, K Fujito, ... 69th Device Research Conference, 261-262, 2011 | | 2011 |
Calculation of Electron Temperature and Electron Density Using Neutral Bremsstrahlung Measurement in Atmospheric Pressure Plasma C Holder, JJ Cuomo, CJ Oldham, MA Bourham | | |