| Fuzzy logic and neuro-fuzzy systems: A systematic introduction Y Wu, B Zhang, J Lu INTERNATIONAL JOURNAL OF ARTIFICIAL INTELLIGENCE AND EXPERT SYSTEMS (IJAE) 2 …, 2011 | 88 | 2011 |
| The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction J Lu, R Chen, H Liang, Q Yan Precision Engineering 52, 221-226, 2018 | 66 | 2018 |
| Neural network implementations for PCA and its extensions J Qiu, H Wang, J Lu, B Zhang, KL Du International Scholarly Research Notices 2012 (1), 847305, 2012 | 44 | 2012 |
| Evolutionary computation and its applications in neural and fuzzy systems B Zhang, Y Wu, J Lu, KL Du Applied Computational Intelligence and Soft Computing 2011, 7-7, 2011 | 44 | 2011 |
| Material removal process of single-crystal SiC in chemical-magnetorheological compound finishing H Liang, J Lu, J Pan, Q Yan The International Journal of Advanced Manufacturing Technology 94, 2939-2948, 2018 | 41 | 2018 |
| The influences of technological parameters on the ultraviolet photocatalytic reaction rate and photocatalysis-assisted polishing effect for SiC Q Yan, X Wang, Q Xiong, J Lu, B Liao Journal of Crystal Growth 531, 125379, 2020 | 35 | 2020 |
| Cluster magnetorheological effect plane polishing technology 潘继生， 阎秋生， 路家斌， 徐西鹏， 陈森凯 Journal of Mechanical Engineering 50 (1), 205-212, 2014 | 33 | 2014 |
| The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate J Deng, J Pan, Q Zhang, Q Yan, J Lu Surfaces and Interfaces 21, 100730, 2020 | 32 | 2020 |
| Prediction of the surface roughness and material removal rate in chemical mechanical polishing of single-crystal SiC via a back-propagation neural network J Deng, Q Zhang, J Lu, Q Yan, J Pan, R Chen Precision Engineering 72, 102-110, 2021 | 30 | 2021 |
| Tribological behavior of 6H–SiC wafers in different chemical mechanical polishing slurries Q Zhang, J Pan, X Zhang, J Lu, Q Yan Wear 472, 203649, 2021 | 29 | 2021 |
| Influences of processing parameters on metal-bonded diamond wheel wear when grinding a sapphire wafer B Luo, Q Yan, J Pan, J Lu, Z Huang Diamond and Related Materials 113, 108275, 2021 | 26 | 2021 |
| Enhancement mechanism of chemical mechanical polishing for single-crystal 6H-SiC based on Electro-Fenton reaction J Deng, J Lu, Q Yan, J Pan Diamond and Related Materials 111, 108147, 2021 | 25 | 2021 |
| Material removal mechanisms in chemical-magnetorheological compound finishing H Liang, Q Yan, J Lu, B Luo, X Xiao The International Journal of Advanced Manufacturing Technology 103, 1337-1348, 2019 | 25 | 2019 |
| Parametric study of micro machining with instantaneous tiny-grinding wheel based on the magnetorheological effect of abrasive slurry JB Lu, QS Yan, J Yu, WQ Gao International Journal of Materials and Product Technology 31 (1), 113-124, 2008 | 22 | 2008 |
| Polishing properties of tiny grinding wheel based on Fe3O4 electrorheological fluid JB Lu, QS Yan, H Tian, LY Kong Journal of Materials Processing Technology 209 (11), 4954-4957, 2009 | 21 | 2009 |
| Synergistic effect of photocatalysis and Fenton on improving the removal rate of 4H-SiC during CMP J Lu, Y Huang, Y Fu, Q Yan, S Zeng ECS Journal of Solid State Science and Technology 10 (4), 044001, 2021 | 19 | 2021 |
| Solid catalysts based on fenton reaction for SiC wafer in chemical mechanical polishing 徐少平， 路家斌， 阎秋生， 宋涛， 潘继生 Journal of Mechanical Engineering 53 (21), 167-173, 2017 | 19 | 2017 |
| Optimization study on magnetorheological fluid components and process parameters of cluster magnetorheological finishing with dynamic magnetic field for sapphire substrates J Pan, K Zheng, Q Yan, Q Zhang, J Lu Smart Materials and Structures 29 (11), 114009, 2020 | 18 | 2020 |
| Parametric investigation into accommodate-sinking effect of cluster magnetorheological effect pad Z Bai, Q Yan, J Lu, X Xu The International Journal of Advanced Manufacturing Technology 75, 1447-1456, 2014 | 18 | 2014 |
| Chemical mechanical polishing exploiting metal electrochemical corrosion of single-crystal SiC Y Luo, Q Xiong, J Lu, Q Yan, D Hu Materials Science in Semiconductor Processing 152, 107067, 2022 | 15 | 2022 |
