| Ultrafast synaptic events in a chalcogenide memristor Y Li, Y Zhong, L Xu, J Zhang, X Xu, H Sun, X Miao Scientific reports 3 (1), 1619, 2013 | 434 | 2013 |
| Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems Y Li, Y Zhong, J Zhang, L Xu, Q Wang, H Sun, H Tong, X Cheng, X Miao Scientific reports 4 (1), 4906, 2014 | 333 | 2014 |
| Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging Y Zhang, GQ Mao, X Zhao, Y Li, M Zhang, Z Wu, W Wu, H Sun, Y Guo, ... Nature communications 12 (1), 7232, 2021 | 121 | 2021 |
| AgInSbTe memristor with gradual resistance tuning JJ Zhang, HJ Sun, Y Li, Q Wang, XH Xu, XS Miao Applied Physics Letters 102 (18), 2013 | 98 | 2013 |
| Customized binary and multi-level HfO2−x-based memristors tuned by oxidation conditions W He, H Sun, Y Zhou, K Lu, K Xue, X Miao Scientific reports 7 (1), 10070, 2017 | 76 | 2017 |
| 16 Boolean logics in three steps with two anti-serially connected memristors Y Zhou, Y Li, L Xu, S Zhong, H Sun, X Miao Applied Physics Letters 106 (23), 2015 | 62 | 2015 |
| Realization of functional complete stateful Boolean logic in memristive crossbar Y Li, YX Zhou, L Xu, K Lu, ZR Wang, N Duan, L Jiang, L Cheng, ... ACS applied materials & interfaces 8 (50), 34559-34567, 2016 | 58 | 2016 |
| Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5 Y Li, YP Zhong, JJ Zhang, XH Xu, Q Wang, L Xu, HJ Sun, XS Miao Applied Physics Letters 103 (4), 2013 | 44 | 2013 |
| Performance enhancement of TaOx resistive switching memory using graded oxygen content B Wang, KH Xue, HJ Sun, ZN Li, W Wu, P Yan, N Liu, BY Tian, XX Liu, ... Applied Physics Letters 113 (18), 2018 | 37 | 2018 |
| Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices P Yan, Y Li, YJ Hui, SJ Zhong, YX Zhou, L Xu, N Liu, H Qian, HJ Sun, ... Applied Physics Letters 107 (8), 2015 | 36 | 2015 |
| Diverse spike-timing-dependent plasticity based on multilevel HfO x memristor for neuromorphic computing K Lu, Y Li, WF He, J Chen, YX Zhou, N Duan, MM Jin, W Gu, KH Xue, ... Applied Physics A 124, 1-9, 2018 | 35 | 2018 |
| Coexistence of Digital and Analog Resistive Switching With Low Operation Voltage in Oxygen-Gradient HfOx Memristors Z Li, B Tian, KH Xue, B Wang, M Xu, H Lu, H Sun, X Miao IEEE Electron Device Letters 40 (7), 1068-1071, 2019 | 34 | 2019 |
| Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect LH Li, KH Xue, LQ Zou, JH Yuan, H Sun, X Miao Applied Physics Letters 119 (15), 2021 | 25 | 2021 |
| Model of dielectric breakdown in hafnia-based ferroelectric capacitors KH Xue, HL Su, Y Li, HJ Sun, WF He, TC Chang, L Chen, DW Zhang, ... Journal of Applied Physics 124 (2), 2018 | 25 | 2018 |
| Alleviating Conductance Nonlinearity via Pulse Shape Designs in TaOx Memristive Synapses SJ Li, BY Dong, B Wang, Y Li, HJ Sun, YH He, N Xu, XS Miao IEEE Transactions on Electron Devices 66 (1), 810-813, 2018 | 21 | 2018 |
| Boolean and Sequential Logic in a One‐Memristor‐One‐Resistor (1M1R) Structure for In‐Memory Computing YX Zhou, Y Li, N Duan, ZR Wang, K Lu, MM Jin, L Cheng, SY Hu, ... Advanced Electronic Materials 4 (9), 1800229, 2018 | 20 | 2018 |
| Non-volatile boolean logic operation circuit and operation method thereof X Miao, Y Zhou, Y Li, H Sun US Patent 9,473,137, 2016 | 19 | 2016 |
| Ferroelectricity in HfO2 from a Coordination Number Perspective JH Yuan, GQ Mao, KH Xue, N Bai, C Wang, Y Cheng, H Lyu, H Sun, ... Chemistry of Materials 35 (1), 94-103, 2022 | 18 | 2022 |
| Conductance quantization in an AgInSbTe-based memristor at nanosecond scale L Jiang, L Xu, JW Chen, P Yan, KH Xue, HJ Sun, XS Miao Applied Physics Letters 109 (15), 2016 | 17 | 2016 |
| Electrode Materials for Ge2Sb2Te5-Based Memristors Q Wang, HJ Sun, JJ Zhang, XH Xu, XS Miao Journal of electronic materials 41, 3417-3422, 2012 | 17 | 2012 |
