| Plasmon-enhanced below bandgap photoconductive terahertz generation and detection A Jooshesh, V Bahrami-Yekta, J Zhang, T Tiedje, TE Darcie, R Gordon Nano letters 15 (12), 8306-8310, 2015 | 78 | 2015 |
| Bandgap and optical absorption edge of GaAs1− xBix alloys with 0< x< 17.8% M Masnadi-Shirazi, RB Lewis, V Bahrami-Yekta, T Tiedje, M Chicoine, ... Journal of Applied Physics 116 (22), 2014 | 74 | 2014 |
| Nanoplasmonics enhanced terahertz sources A Jooshesh, L Smith, M Masnadi-Shirazi, V Bahrami-Yekta, T Tiedje, ... Optics express 22 (23), 27992-28001, 2014 | 72 | 2014 |
| Deep level defects in n-type GaAsBi and GaAs grown at low temperatures PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ... Journal of Applied Physics 113 (13), 2013 | 53 | 2013 |
| Plasmonic antireflection coating for photoconductive terahertz generation F Fesharaki, A Jooshesh, V Bahrami-Yekta, M Mahtab, T Tiedje, ... ACS photonics 4 (6), 1350-1354, 2017 | 42 | 2017 |
| Limiting efficiency of indoor silicon photovoltaic devices V Bahrami-Yekta, T Tiedje Optics express 26 (22), 28238-28248, 2018 | 37 | 2018 |
| Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation A Jooshesh, F Fesharaki, V Bahrami-Yekta, M Mahtab, T Tiedje, ... Optics express 25 (18), 22140-22148, 2017 | 31 | 2017 |
| MBE growth optimization for GaAs1− xBix and dependence of photoluminescence on growth temperature V Bahrami-Yekta, T Tiedje, M Masnadi-Shirazi Semiconductor Science and Technology 30 (9), 094007, 2015 | 31 | 2015 |
| Complex dielectric function of as a function of Bi content M Mahtab, R Synowicki, V Bahrami-Yekta, LC Bannow, SW Koch, ... Physical Review Materials 3 (5), 054601, 2019 | 19 | 2019 |
| Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films P Wu, T Tiedje, H Alimohammadi, V Bahrami-Yekta, M Masnadi-Shirazi, ... Semiconductor Science and Technology 31 (10), 10LT01, 2016 | 19 | 2016 |
| Raman and AFM studies on nominally undoped, p-and n-type GaAsBi alloys A Erol, E Akalin, K Kara, M Aslan, V Bahrami-Yekta, RB Lewis, T Tiedje Journal of Alloys and Compounds 722, 339-343, 2017 | 18 | 2017 |
| Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy M Beaudoin, RB Lewis, JJ Andrews, V Bahrami-Yekta, M Masnadi-Shirazi, ... Journal of Crystal Growth 425, 245-249, 2015 | 16 | 2015 |
| Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures PM Mooney, MC Tarun, V Bahrami-Yekta, T Tiedje, RB Lewis, ... Semiconductor Science and Technology 31 (6), 065007, 2016 | 12 | 2016 |
| Design considerations to improve high temperature characteristics of 1.3 μm AlGaInAs-InP uncooled multiple quantum well lasers: Strain in barriers VB Yekta, H Kaatuzian Optik 122 (6), 514-519, 2011 | 11 | 2011 |
| Simulationand Temperature Characteristics Improvement of 1.3 μm AlGaInAs Multiple Quantum Well Laser VB Yekta, H Kaatuzian Int. J. Opt. and Appl 4 (2), 46-53, 2014 | 10 | 2014 |
| Closed-cycle cooling of cryopanels in molecular beam epitaxy RB Lewis, V Bahrami-Yekta, MJ Patel, T Tiedje, M Masnadi-Shirazi Journal of Vacuum Science & Technology B 32 (2), 2014 | 6 | 2014 |
| Closed cycle chiller as a low cost alternative to liquid nitrogen in molecular beam epitaxy RB Lewis, JA Mackenzie, T Tiedje, DA Beaton, M Masnadi-Shirazi, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 6 | 2013 |
| Erratum:“Deep level defects in n-type GaAsBi and GaAs grown at low temperatures”[J. Appl. Phys. 113, 133708 (2013)] PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ... Journal of Applied Physics 117 (1), 2015 | 5 | 2015 |
| A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers VB Yekta, H Kaatuzian Communications in Theoretical Physics 54 (3), 529, 2010 | 4 | 2010 |
| Optimization of growth conditions of GaAs1-xBix alloys for laser applications V Bahrami Yekta | 1 | 2016 |
