| The level-set method for multi-material wet etching and non-planar selective epitaxy A Toifl, M Quell, X Klemenschits, P Manstetten, A Hössinger, S Selberherr, ... IEEE Access 8, 115406-115422, 2020 | 21 | 2020 |
| Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide V Šimonka, A Toifl, A Hössinger, S Selberherr, J Weinbub Journal of Applied Physics 123 (23), 2018 | 20 | 2018 |
| Continuum level-set model for anisotropic wet etching of patterned sapphire substrates A Toifl, F Rodrigues, LF Aguinsky, A Hössinger, J Weinbub Semiconductor Science and Technology 36 (4), 045016, 2021 | 9 | 2021 |
| Surface reaction and topography modeling of fluorocarbon plasma etching F Rodrigues, LF Aguinsky, A Toifl, A Scharinger, A Hössinger, J Weinbub 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | 6 | 2021 |
| Novel numerical dissipation scheme for level-set based anisotropic etching simulations A Toifl, M Quell, A Hössinger, A Babayan, S Selberherr, J Weinbub 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 5 | 2019 |
| Parallelized level-set velocity extension algorithm for nanopatterning applications M Quell, A Toifl, A Hössinger, S Selberherr, J Weinbub 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 5 | 2019 |
| Simulation of the effects of postimplantation annealing on silicon carbide DMOSFET characteristics A Toifl, V Šimonka, A Hössinger, S Selberherr, T Grasser, J Weinbub IEEE Transactions on Electron Devices 66 (7), 3060-3065, 2019 | 5 | 2019 |
| Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations C Lenz, A Toifl, M Quell, F Rodrigues, A Hössinger, J Weinbub Solid-State Electronics 191, 108258, 2022 | 3 | 2022 |
| Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride A Toifl, V Šimonka, A Hössinger, S Selberherr, J Weinbub 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 2 | 2018 |
| Modeling and simulation of thermal annealing of implanted GaN and SiC A Toifl Wien, 2018 | 2 | 2018 |
| Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si LF Aguinsky, G Wachter, F Rodrigues, A Scharinger, A Toifl, M Trupke, ... 2021 Joint International EUROSOI Workshop and International Conference on …, 2021 | 1 | 2021 |
| Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena F Rodrigues, LF Aguinsky, A Toifl, A Hössinger, J Weinbub Book of Abstracts of the International Workshop on Computational …, 2021 | 1 | 2021 |
| Numerical methods for three-dimensional selective epitaxy and anisotropic wet etching simulations A Toifl Technische Universität Wien, 2021 | 1 | 2021 |
| Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings T Reiter, A Toifl, SW Kong, A Hessinger, L Filipovic 2024 International Conference on Simulation of Semiconductor Processes and …, 2024 | | 2024 |
| Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures T Reiter, A Toifl, A Hössinger, L Filipovic 2023 International Conference on Simulation of Semiconductor Processes and …, 2023 | | 2023 |
| A Modern Formulation of Knudsen Diffusion with Applications to Nanofabrication LF Aguinsky, A Toifl, F Rodrigues, A Hössinger, J Weinbub 2023 IEEE 23rd International Conference on Nanotechnology (NANO), 270-275, 2023 | | 2023 |
| Physical Process TCAD: Victory Process’ Crystal Anisotropy Engine A Toifl P} roceedings of the {S} ilvaco {U} sers {G} lobal {E} vent ({S}{U}{R}{G}{E …, 2020 | | 2020 |
| Recent Advances in High Performance Process TCAD G Diamantopoulos, P Manstetten, L Gnam, V Simonka, LF Aguinsky, ... CSE19 Abstracts, 335, 2019 | | 2019 |
| High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport P Manstetten, G Diamantopoulos, L Gnam, LF Aguinsky, M Quell, A Toifl, ... Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD), 13, 2019 | | 2019 |
| Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations C Lenz, A Toifl, A Hössinger, J Weinbub | | |
Josef WeinbubSilvaco Group, Inc.在 silvaco.com 的电子邮件经过验证
