Effect of the quantum well thickness on the performance of InGaN photovoltaic cells L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ... Applied Physics Letters 105 (13), 2014 | 82 | 2014 |
Determination of n-type doping level in single GaAs nanowires by cathodoluminescence HL Chen, C Himwas, A Scaccabarozzi, P Rale, F Oehler, A Lemaître, ... Nano letters 17 (11), 6667-6675, 2017 | 46 | 2017 |
Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots C Himwas, R Songmuang, LS Dang, J Bleuse, L Rapenne, ... Applied Physics Letters 101 (24), 2012 | 41 | 2012 |
Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission C Himwas, M Den Hertog, LS Dang, E Monroy, R Songmuang Applied Physics Letters 105 (24), 2014 | 39 | 2014 |
In situ passivation of GaAsP nanowires C Himwas, S Collin, P Rale, N Chauvin, G Patriarche, F Oehler, FH Julien, ... Nanotechnology 28 (49), 495707, 2017 | 35 | 2017 |
Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots C Himwas, M Den Hertog, E Bellet-Amalric, R Songmuang, F Donatini, ... Journal of Applied Physics 116 (2), 2014 | 27 | 2014 |
Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications O Saket, C Himwas, V Piazza, F Bayle, A Cattoni, F Oehler, G Patriarche, ... Nanotechnology 31 (14), 145708, 2020 | 20 | 2020 |
AlGaN/AlN quantum dots for UV light emitters C Himwas, M Hertog, F Donatini, LS Dang, L Rapenne, E Sarigiannidou, ... physica status solidi c 10 (3), 285-288, 2013 | 14 | 2013 |
Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns C Himwas, S Panyakeow, S Kanjanachuchai Nanoscale research letters 6, 1-7, 2011 | 11 | 2011 |
Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires C Himwas, S Collin, HL Chen, G Patriarche, F Oehler, L Travers, O Saket, ... Nanotechnology 30 (30), 304001, 2019 | 10 | 2019 |
Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001) C Himwas, S Kijamnajsuk, V Yordsri, C Thanachayanont, T Wongpinij, ... Semiconductor Science and Technology 36 (4), 045014, 2021 | 6 | 2021 |
Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires O Saket, C Himwas, A Cattoni, F Oehler, F Bayle, S Collin, L Travers, ... Applied Physics Letters 117 (12), 2020 | 6 | 2020 |
GaAsPBi epitaxial layer grown by molecular beam epitaxy C Himwas, A Soison, S Kijamnajsuk, T Wongpinij, C Euaraksakul, ... Semiconductor Science and Technology 35 (9), 095009, 2020 | 5 | 2020 |
Hertog M den, Dang LS, Monroy E and Songmuang R 2014 Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission C Himwas Appl. Phys. Lett 105, 241908, 0 | 5 | |
GaAs/GaAsPBi core–shell nanowires grown by molecular beam epitaxy C Himwas, V Yordsri, C Thanachayanont, M Tchernycheva, S Panyakeow, ... Nanotechnology 33 (9), 095602, 2021 | 3 | 2021 |
Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations S Kanjanachuchai, T Wongpinij, S Kijamnajsuk, C Himwas, S Panyakeow, ... Journal of Applied Physics 123 (16), 2018 | 3 | 2018 |
III-Nitride nanostructures for UV emitters C Himwas Université Grenoble Alpes, 2015 | 3 | 2015 |
III-V Nanowires on Silicon: a possible route to Si-based tandem solar cells A Cattoni, A Scaccabarozzi, HL Chen, C Himwas, F Oehler, G Patriarche, ... Optical Nanostructures and Advanced Materials for Photovoltaics, PM3A. 2, 2017 | 2 | 2017 |
Cathodoluminescence characterization of semiconductor doping at the nanoscale HL Chen, A Scaccabarozzi, R De Lépinau, C Himwas, P Rale, F Oehler, ... 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A …, 2018 | 1 | 2018 |
Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette C Himwas Université Grenoble Alpes (ComUE), 2015 | 1 | 2015 |