| A comparison of electron, proton and gamma irradiation effects on the IV characteristics of 200 GHz SiGe HBTs VN Hegde, TM Pradeep, N Pushpa, KC Praveen, KG Bhushan, ... IEEE Transactions on Device and Materials Reliability 18 (4), 592-598, 2018 | 19 | 2018 |
| Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs AP Gnana Prakash, TM Pradeep, VN Hegde, N Pushpa, PK Bajpai, ... Radiation Effects and Defects in Solids 172 (11-12), 952-963, 2017 | 16 | 2017 |
| A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs A Anjum, NH Vinayakprasanna, TM Pradeep, N Pushpa, JBM Krishna, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 13 | 2016 |
| Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors MN Bharathi, VN Hegde, A Anjum, TM Pradeep, N Pushpa, KC Praveen, ... Radiation Effects and Defects in Solids 172 (3-4), 235-249, 2017 | 12 | 2017 |
| Effect of CeO2 nanoparticles on dielectric properties of PVB/CeO2 polymer nanodielectrics: a positron lifetime study M Raghavendra, K Jagadish, S Srikantaswamy, TM Pradeep, ... Journal of Materials Science: Materials in Electronics 33 (2), 1063-1077, 2022 | 11 | 2022 |
| High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200áGHz SiGe HBTs VN Hegde, KC Praveen, TM Pradeep, N Pushpa, JD Cressler, A Tripathi, ... Nuclear Engineering and Technology 51 (5), 1428-1435, 2019 | 8 | 2019 |
| Analysis of 80-MeV carbon and 80-MeV nitrogen ion irradiation effects on n-channel MOSFETs A Anjum, TM Pradeep, NH Vinayakprasanna, N Pushpa, A Tripathi, ... IEEE Transactions on Device and Materials Reliability 19 (4), 696-703, 2019 | 5 | 2019 |
| Fabrication of lead zirconate titanate-based polyvinylidene fluoride polymer nano-composites: microcrystalline, morphological and electrical studies M Rakesh, BRN Babu, APG Prakash, NS Prema, AC Gowda, ... Journal of Materials Science: Materials in Electronics 34 (5), 372, 2023 | 4 | 2023 |
| Swift heavy ions-induced degradation on the electrical characteristics of silicon NPN power transistors TM Pradeep, VN Hegde, N Pushpa, A Tripathi, K Asokan, ... Radiation Effects and Defects in Solids 174 (9-10), 859-872, 2019 | 4 | 2019 |
| Reliability studies on bipolar transistors under different particles radiation VN Hegde, TM Pradeep, MN Bharathi, JD Cressler, APG Prakash Solid-State Electronics 206, 108671, 2023 | 3 | 2023 |
| 50áMeV lithium ion irradiation studies on silicon-germanium heterojunction bipolar transistors at low temperature VN Hegde, KC Praveen, TM Pradeep, JD Cressler, APG Prakash Microelectronics Reliability 137, 114754, 2022 | 3 | 2022 |
| Structural, Morphological, Elastic, Optical and Electrical properties of MgO nanostructures VN Hegde, VV Manju, TM Pradeep, NC Sandhya Materials Chemistry and Physics, 129518, 2024 | 1 | 2024 |
| An investigation of 10 MeV electron irradiation on silicon NPN transistors TM Pradeep, VN Hegde, N Pushpa, KG Bhushan, M Kumar, AP Prakash AIP Conference Proceedings 2265 (1), 2020 | 1 | 2020 |
| The effects of high-energy ion irradiations on the I–V characteristics of silicon NPN transistors AP Gnana Prakash, MN Bharathi, VN Hegde, TM Pradeep, N Pushpa, ... Radiation Effects and Defects in Solids 173 (7-8), 683-693, 2018 | 1 | 2018 |
| Comparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistors TM Pradeep, VN Hegde, N Pushpa, KG Bhushan, AP Prakash NISCAIR-CSIR, India, 2018 | 1 | 2018 |
| 5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors AP Gnana Prakash, VN Hegde, TM Pradeep, N Pushpa, PK Bajpai, ... Radiation Effects and Defects in Solids 172 (11-12), 922-930, 2017 | 1 | 2017 |
| Synthesis and characterization of Ga2O3 nanoparticles for electronic device applications VV Manju, VN Hegde, TM Pradeep, BC Hemaraju, R Somashekar Inorganic Chemistry Communications 165, 112562, 2024 | | 2024 |
| The dependence of proton energy on the parametric degradation in silicon bipolar junction transistors VN Hegde, MN Bharathi, TM Pradeep, AP Gnana Prakash Radiation Effects and Defects in Solids 178 (7-8), 1012-1024, 2023 | | 2023 |
| An investigation on dose rate effect of 60Co gamma radiation on 200 GHz SiGe HBTs VN Hegde, BC Hemaraju, TM Pradeep, VV Manju, JD Cressler, ... AIP Conference Proceedings 2265 (1), 2020 | | 2020 |
| Swift Heavy Ion Irradiation Studies on SiGe HBTs at Low Temperature VN Hegde, JD Cressler, TM Pradeep, APG Prakash | | 2020 |
