| TCAD Framework for HCD Kinetics in Low VD Devices Spanning Full VG/VD Space U Sharma, M Duan, H Diwakar, K Thakor, HY Wong, S Motzny, D Dolgos, ... IEEE Transactions on Electron Devices 67 (11), 4749-4756, 2020 | 14 | 2020 |
| Modeling of classical channel hot electron degradation in n-MOSFETs using TCAD H Diwakar, K Thakor, S Mahapatra IEEE Transactions on Electron Devices 69 (7), 3596-3603, 2022 | 7 | 2022 |
| Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETs H Diwakar, K Thakor, S Mahapatra 2022 IEEE International Reliability Physics Symposium (IRPS), P55-1-P55-6, 2022 | 4 | 2022 |
| A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD Souvik Mahapatra, Himanshu Diwakar, Karansingh Thakor, Nilotpal Choudhury ... IEEE Transactions on Electron Devices, 12, 2023 | 2 | 2023 |
| Modeling of channel hot electron degradation in n-MOSFETs K Thakor, H Diwakar, S Mahapatra 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit …, 2022 | 1 | 2022 |
| Study of gate misalignment effects in single-material double-gate (SMDG) MOSFET considering source and drain lateral Gaussian doping profile H Diwakar, S Nayak, R Kumar 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 11-14, 2018 | 1 | 2018 |
| A TCAD Framework for HCD in n-MOSFETs for PMIC Applications H Diwakar, S Mahapatra 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
| Low Loss Ohmic Type Piezoelectric Actuated RF MEMS Switch Designed with PZT and ZnO S Nayak, JC Dash, H Diwakar 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 6-9, 2018 | | 2018 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)在 ee.iitb.ac.in 的电子邮件经过验证
