| Microwave annealing of Mg-implanted and in situ Be-doped GaN GS Aluri, M Gowda, NA Mahadik, SG Sundaresan, MV Rao, JA Schreifels, ... Journal of Applied Physics 108 (8), 2010 | 50 | 2010 |
| Semi-insulating GaN substrates for high-frequency device fabrication JA Freitas Jr, M Gowda, JG Tischler, JH Kim, L Liu, D Hanser Journal of Crystal Growth 310 (17), 3968-3972, 2008 | 45 | 2008 |
| Seeded growth of GaN single crystals from solution at near atmospheric pressure BN Feigelson, RM Frazier, M Gowda, JA Freitas Jr, M Fatemi, MA Mastro, ... Journal of crystal growth 310 (17), 3934-3940, 2008 | 21 | 2008 |
| Nature of luminescence and strain in gallium nitride nanowires MA Mastro, S Maximenko, M Gowda, BS Simpkins, PE Pehrsson, JP Long, ... Journal of crystal growth 311 (10), 2982-2986, 2009 | 10 | 2009 |
| Optical properties of bulk GaN crystals grown from solution at moderate pressure and temperature M Gowda, JA Freitas Jr, RM Frazier, BN Feigelson, MV Rao Journal of crystal growth 310 (17), 3941-3945, 2008 | 6 | 2008 |
| Optical Characterization of Wide-band gap Bulk crystals and Epitaxial layers MH Gowda George Mason University, 2008 | 1 | 2008 |
| An Effective Model for Heterogeneous Face recognition in a Static Background DM Anupama, H Gowda, M CM | | 2021 |
| Designing an efficient model for Heterogeneous Face Recognition (HFR) System. DM Anupama, H Gowda, M CM | | |
