| Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET X Liang, J Cui, Q Zheng, J Zhao, X Yu, J Sun, D Zhang, Q Guo Radiation Effects and Defects in Solids 175 (5-6), 559-566, 2020 | 19 | 2020 |
| Read static noise margin decrease of 65-nm 6-T SRAM cell induced by total ionizing dose Q Zheng, J Cui, X Yu, W Lu, C He, T Ma, J Zhao, D Ren, Q Guo IEEE Transactions on Nuclear Science 65 (2), 691-697, 2017 | 15 | 2017 |
| Displacement damage effects in backside illuminated CMOS image sensors B Liu, Y Li, L Wen, J Zhao, D Zhou, J Feng, Q Guo IEEE Transactions on Electron Devices 69 (6), 2907-2914, 2021 | 4 | 2021 |
| Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET X Liang, J Zhao, Q Zheng, JW Cui, S Yang, B Wang, D Zhang, XF Yu, ... Radiation Effects and Defects in Solids 176 (11-12), 1038-1048, 2021 | 3 | 2021 |
| Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation J Zhao, H Zhou, J Cui, Q Zheng, Y Wei, S Xi, X Yu, Q Guo Radiation Effects and Defects in Solids, 2019 | 1 | 2019 |
| A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs J Zhao, Q Zheng, J Cui, H Zhou, X Liang, X Yu, Q Guo Results in Physics 13, 102223, 2019 | 1 | 2019 |
| Cryogenic Modeling of 22nm FDSOI MOSFET Y Qing, J Zhao, V De Smedt, J Prinzie 2024 International Conference on Simulation of Semiconductor Processes and …, 2024 | | 2024 |
| A 10 MS/s 12-bit Cryogenic SAR ADC in 22nm FD SOI for Quantum Computing J Zhao, Z Li, Y Qing, Q Ma, C Wang, J Prinze, P Leroux 2024 22nd IEEE Interregional NEWCAS Conference (NEWCAS), 2024 | | 2024 |
| An 80MS/s 70.79 dB-SNDR 60.7 fJ/Conv-Step Radiation-Tolerant Semi-Time-interleaved Pipelined-SAR ADC Z Li, L Berti, Q Lin, J Zhao, M Gorbunov, G Thys, P Leroux 2024 IEEE Custom Integrated Circuits Conference (CICC), 1-2, 2024 | | 2024 |
| The impact of body effect on TID of ultra deep sub micron SOI devices S XI, W LU, Q ZHENG, J CUI, Y WEI, S YAO, J ZHAO, Q GUO ACTA ELECTONICA SINICA 47 (5), 1065, 2019 | | 2019 |
| Hot carrier reliability of radiation hardened T-gate PD SOI NMOSFET after TID radiation J Zhao, J Cui, Q Zheng, H Zhou, X Liang, X Yu, Q Guo Fifth Symposium on Novel Optoelectronic Detection Technology and Application …, 2019 | | 2019 |
| A Study on Hot Carrier Reliability of Radiation Hardened H-gate PD SOI NMOSFET after Gamma Radiation J Zhao, X Yu, J Cui, Q Zheng, H Zhou, Q Guo | | |
