| AlGaN/GaN heterostructure pH sensor with multi-sensing segments Y Dong, D Son, Q Dai, JH Lee, CH Won, JG Kim, SH Kang, JH Lee, ... Sensors and Actuators B: Chemical 260, 134-139, 2018 | 64 | 2018 |
| A surface micromachined pressure sensor based on polysilicon nanofilm piezoresistors J Wang, R Chuai, L Yang, Q Dai Sensors and Actuators A: Physical 228, 75-81, 2015 | 27 | 2015 |
| High sensitive pH sensor based on AlInN/GaN heterostructure transistor Y Dong, DH Son, Q Dai, JH Lee, CH Won, JG Kim, D Chen, JH Lee, H Lu, ... Sensors 18 (5), 1314, 2018 | 17 | 2018 |
| Deep sub-60 mV/decade subthreshold swing in AlGaN/GaN FinMISHFETs with M-plane sidewall channel Q Dai, DH Son, YJ Yoon, JG Kim, X Jin, IM Kang, DH Kim, Y Xu, ... IEEE Transactions on Electron Devices 66 (4), 1699-1703, 2019 | 15 | 2019 |
| Enhanced stability and sensitivity of AlGaN/GaN-HEMTs pH sensor by reference device Y Dong, R Wang, Z Xie, Y Liu, J Lei, H Guo, Q Dai, JG Kim, SH Kang, ... IEEE Sensors Journal 21 (8), 9771-9776, 2020 | 9 | 2020 |
| A simulation study on the effects of interface charges and geometry on vertical GAA GaN nanowire MOSFET for low-power application T Thingujam, Q Dai, E Kim, JH Lee IEEE Access 9, 101447-101453, 2021 | 8 | 2021 |
| Fabrication and characterization of GaN-based nanostructure field effect transistors DH Son, T Thingujam, Q Dai, JG Kim, S Cristoloveanu, JH Lee Solid-State Electronics 184, 108079, 2021 | 5 | 2021 |
| Subthreshold characteristics of AlGaN/GaN MIS-FinFETs with controlling threshold voltages Q Dai, JH Lee Electronics 9 (11), 1967, 2020 | 4 | 2020 |
| Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors S Xu, Y Zhou, X Zhang, Q Li, J Liu, H Qie, Q Wang, X Zhan, X Sun, Q Dai, ... Applied Physics Letters 123 (20), 2023 | 3 | 2023 |
| Impact of eliminating ungated access regions on DC and thermal performance of GaN-based MIS-HEMT X Zhang, Y Zhou, S Xu, H Qie, Q Wang, Q Li, J Liu, X Sun, Q Dai, X Zhan, ... Semiconductor Science and Technology 39 (6), 065018, 2024 | 1 | 2024 |
| Threshold voltage modulation of AlGaN/GaN MIS-FinFETs with sub-60 mV/decade subthreshold swing Q Dai, RH Kim, JH Lee, JG Kim, T Thingujam, SH Kang, WH Ahn, EJ Kim, ... 2020 Joint International EUROSOI Workshop and International Conference on …, 2020 | 1 | 2020 |
| High Overload Pressure Sensor Construct With Polysilicon Nanofilm C Rongyan, W Jian, Y Chang, D Quan, Y Lijian IEEE Sensors Journal 15 (3), 1414-1420, 2014 | 1 | 2014 |
| Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage X Zhang, H Qie, Y Zhou, Y Zhong, J Liu, Q Dai, Q Li, X Zhan, X Guo, ... Applied Physics Express 17 (9), 096501, 2024 | | 2024 |
| Neural Network Estimation of Eardrum Temperature Using Multiple Sensors Integrated on a Wristwatch-Sized Device Y Dong, R Wang, Z Xie, Y Liu, J Lei, H Guo, Q Dai, JG Kim, SH Kang, ... IEEE SENSORS JOURNAL 21 (8), 9771-9776, 2021 | | 2021 |
| Design of Polysilicon Nano-film Pressure Sensitive Chip Structure C Rongyan, W Jian, Z Hao, Y Lijian, D Quan 2013 Third International Conference on Instrumentation, Measurement …, 2013 | | 2013 |
| Polysilicon Nanofilms Piezoresistive Acceleration Sensor with Ultra-thin Micro-beam RY Chuai, Y Bai, ML Wu, Q Dai, XS Jin Instrument Technique and Sensor, 1-3, 2013 | | 2013 |
