Bright triplet excitons in caesium lead halide perovskites MA Becker, R Vaxenburg, G Nedelcu, PC Sercel, A Shabaev, MJ Mehl, ... Nature 553 (7687), 189-193, 2018 | 878 | 2018 |
Carbon impurities and the yellow luminescence in GaN JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 97, 152108, 2010 | 721 | 2010 |
Why nitrogen cannot lead to p-type conductivity in ZnO JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 95, 252105, 2009 | 466 | 2009 |
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN JL Lyons, A Janotti, CG Van de Walle Physical Review B 89 (3), 035204, 2014 | 459 | 2014 |
Shallow versus deep nature of Mg acceptors in nitride semiconductors J Lyons, A Janotti, C G Van de Walle Physical Review Letters 108, 156403, 2012 | 296 | 2012 |
Computationally predicted energies and properties of defects in GaN JL Lyons, CG Van de Walle NPJ Computational Materials 3 (1), 12, 2017 | 265 | 2017 |
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO A Alkauskas, JL Lyons, D Steiauf, CG Van de Walle Physical review letters 109 (26), 267401, 2012 | 242 | 2012 |
A survey of acceptor dopants for β-Ga2O3 JL Lyons Semiconductor science and technology 33 (5), 05LT02, 2018 | 210 | 2018 |
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3 MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019 | 205 | 2019 |
Hybrid functional calculations of centers in AlN and GaN L Gordon, JL Lyons, A Janotti, CG Van de Walle Physical Review B 89 (8), 085204, 2014 | 199 | 2014 |
Deep acceptors and their diffusion in Ga2O3 H Peelaers, JL Lyons, JB Varley, CG Van de Walle APL Materials 7 (2), 2019 | 190 | 2019 |
Exciton fine structure in perovskite nanocrystals PC Sercel, JL Lyons, D Wickramaratne, R Vaxenburg, N Bernstein, ... Nano letters 19 (6), 4068-4077, 2019 | 167 | 2019 |
First‐principles theory of acceptors in nitride semiconductors JL Lyons, A Alkauskas, A Janotti, CG Van de Walle physica status solidi (b) 252 (5), 900-908, 2015 | 138 | 2015 |
First-principles calculations of point defects for quantum technologies CE Dreyer, A Alkauskas, JL Lyons, A Janotti, CG Van de Walle Annual Review of Materials Research 48 (1), 1-26, 2018 | 120 | 2018 |
Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices M Choi, JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 102 (14), 2013 | 118 | 2013 |
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors A Alkauskas, CE Dreyer, JL Lyons, CG Van de Walle Physical Review B 93 (20), 201304, 2016 | 111 | 2016 |
Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters CE Dreyer, A Alkauskas, JL Lyons, JS Speck, CG Van de Walle Applied Physics Letters 108 (14), 2016 | 111 | 2016 |
The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2 JL Lyons, A Janotti, CG Van de Walle Microelectronic Engineering, 2011 | 109 | 2011 |
First-principles characterization of native-defect-related optical transitions in ZnO JL Lyons, JB Varley, D Steiauf, A Janotti, CG Van de Walle Journal of Applied Physics 122 (3), 2017 | 108 | 2017 |
Controlling the conductivity of InN CG Van de Walle, JL Lyons, A Janotti physica status solidi (a) 207 (5), 1024-1036, 2010 | 98 | 2010 |