| Interwell carrier transport in InGaN/(In) GaN multiple quantum wells S Marcinkevičius, R Yapparov, LY Kuritzky, YR Wu, S Nakamura, ... Applied Physics Letters 114 (15), 2019 | 31 | 2019 |
| Electrochemical etching of AlGaN for the realization of thin-film devices MA Bergmann, J Enslin, R Yapparov, F Hjort, B Wickman, ... Applied Physics Letters 115 (18), 2019 | 27 | 2019 |
| Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells R Yapparov, YC Chow, C Lynsky, F Wu, S Nakamura, JS Speck, ... Journal of Applied Physics 128 (22), 2020 | 17 | 2020 |
| High internal quantum efficiency of long wavelength InGaN quantum wells S Marcinkevičius, R Yapparov, YC Chow, C Lynsky, S Nakamura, ... Applied Physics Letters 119 (7), 2021 | 15 | 2021 |
| Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport S Marcinkevičius, R Yapparov, LY Kuritzky, YR Wu, S Nakamura, ... Physical Review B 101 (7), 075305, 2020 | 14 | 2020 |
| Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs S Marcinkevičius, J Ewing, R Yapparov, F Wu, S Nakamura, JS Speck Applied Physics Letters 123 (20), 2023 | 12 | 2023 |
| Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination R Yapparov, C Lynsky, S Nakamura, JS Speck, S Marcinkevičius Applied Physics Express 13 (12), 122005, 2020 | 7 | 2020 |
| Dynamics of carrier injection through V-defects in long wavelength GaN LEDs S Marcinkevičius, T Tak, YC Chow, F Wu, R Yapparov, SP DenBaars, ... Applied Physics Letters 124 (18), 2024 | 4 | 2024 |
| Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects R Yapparov, T Tak, J Ewing, F Wu, S Nakamura, SP DenBaars, JS Speck, ... Applied Physics Letters 125 (3), 2024 | 3 | 2024 |
| Optimization of InGaN quantum well interfaces for fast interwell carrier transport and low nonradiative recombination R Yapparov, C Lynsky, YC Chow, S Nakamura, JS Speck, ... Gallium Nitride Materials and Devices XVII 12001, 14-20, 2022 | 2 | 2022 |
| Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro-and photoluminescence R Yapparov, T Tak, J Ewing, S Nakamura, SP DenBaars, JS Speck, ... Journal of Applied Physics 136 (8), 2024 | 1 | 2024 |
| Top-down fabrication of high quality gallium indium phosphide nanopillar/disk array structures D Visser, R Yapparov, E De Luca, M Swillo, Y Désières, S Marcinkevičius, ... 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2019 | 1 | 2019 |
| Volumetric carrier injection in InGaN quantum well light emitting diodes S Marcinkevičius, R Yapparov, T Tak, J Ewing, F Wu, SP DenBaars, ... Lithuanian Journal of Physics 64 (4), 2024 | | 2024 |
| Carrier injection via V-defects for efficient green and red GaN LEDs S Marcinkevičius, R Yapparov, T Tak, J Ewing, F Wu, SP DenBaars, ... Advanced Materials, Biomaterials, and Manufacturing Technologies for …, 2024 | | 2024 |
| Engineering of quantum barriers for efficient InGaN quantum well LEDs R Yapparov, C Lynsky, YC Chow, S Nakamura, SP DenBaars, JS Speck, ... Novel Optical Materials and Applications, NoW4D. 6, 2022 | | 2022 |
| Carrier dynamics in blue and green InGaN LED structures R Yapparov KTH Royal Institute of Technology, 2022 | | 2022 |
| Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In) GaN Multiple Quantum Wells S Marcinkevičius, R Yapparov, LY Kuritzky, S Nakamura, JS Speck Advanced Solid State Lasers, JW2A. 27, 2019 | | 2019 |
| PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0206357 S Marcinkevičius, T Tak, YC Chow, F Wu, R Yapparov, SP DenBaars, ... | | |
| PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0215336 R Yapparov, T Tak, J Ewing, F Wu, S Nakamura, SP DenBaars, JS Speck, ... | | |
