| Comparison of GaN HEMTs on diamond and SiC substrates JG Felbinger, MVS Chandra, Y Sun, LF Eastman, J Wasserbauer, F Faili, ... IEEE Electron Device Letters 28 (11), 948-950, 2007 | 216 | 2007 |
| Hot-phonon effect on power dissipation in a biased channel M Ramonas, A Matulionis, J Liberis, L Eastman, X Chen, YJ Sun Physical Review B—Condensed Matter and Materials Physics 71 (7), 075324, 2005 | 100 | 2005 |
| Structure and method for MOSFETS with high-K and metal gate structure JJ Lin, YJ Sun, SH Chang, CJ Chen, T Yamamoto, CW Kuo, MY Sun, ... US Patent 8,912,610, 2014 | 42 | 2014 |
| Large-signal performance of deep submicrometer AlGaN/AlN/GaNHEMTs with a field-modulating plate Y Sun, LF Eastman IEEE transactions on electron devices 52 (8), 1689-1692, 2005 | 34 | 2005 |
| Comparative analysis of hot‐electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels L Ardaravičius, M Ramonas, O Kiprijanovic, J Liberis, A Matulionis, ... physica status solidi (a) 202 (5), 808-811, 2005 | 31 | 2005 |
| Hot‐electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs A Matulionis, J Liberis, M Ramonas, I Matulionienė, LF Eastman, ... physica status solidi (c) 2 (7), 2585-2588, 2005 | 30 | 2005 |
| Comprehensive study of Ohmic electrical characteristics and optimization of Ti∕ Al∕ Mo∕ Au multilayer Ohmics on undoped AlGaN∕ GaN heterostructure Y Sun, X Chen, LF Eastman Journal of applied physics 98 (5), 2005 | 25 | 2005 |
| Semiconductor device with strained layer LW Chang, YJ Sun, T Yamamoto US Patent 9,368,626, 2016 | 14 | 2016 |
| Low-resistance Ohmic contacts developed on undoped AlGaN∕ GaN-based high electron mobility transistors with AlN interlayer Y Sun, LF Eastman Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 13 | 2006 |
| Trade-offs and challenges of short channel design on millimetre-wave power performance of GaN HFETs Y Sun, LF Eastman Electronics Letters 41 (15), 854-855, 2005 | 6 | 2005 |
| An atomic level study of multiple co-implantation technology for 32nm and beyond pMOSFETs ultra-shallow junction YJ Sun, YY Cheng, YP Wang, T Yamamoto, CF Cheng, SH Sia, ... Proceedings of 2011 International Symposium on VLSI Technology, Systems and …, 2011 | 5 | 2011 |
| Electron transport and microwave noise in MBE-and MOCVD-grown AlGaN/AlN/GaN A Matulionis, J Liberis, LF Eastman, WJ Schaff, JR Shealy, X Chen, ... Acta Physica Polonica A 107 (2), 361-364, 2005 | 5 | 2005 |
| I/O device optimization techniques tailored for highly-scaled FinFET technology MH Lin, CA Hu, CC Chen, TS Chang, YJ Sun, HY Chen, VS Chang, ... 2017 International Symposium on VLSI Technology, Systems and Application …, 2017 | 2 | 2017 |
| Experimental demonstration of performance enhancement on highly-scaled bulk nFinFETs with novel carrier transport engineering MH Han, YJ Sun, MH Lin, T Yamamoto, SH Yang 2015 International Symposium on VLSI Technology, Systems and Applications, 1-2, 2015 | 2 | 2015 |
| Ohmic contact on GaN HEMTs Y Sun, LF Eastman Lester Eastman Conf. High Performance Devices, Ithaca, NY, 2006 | 2 | 2006 |
| Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer Y Sun, LF Eastman International Journal of High Speed Electronics and Systems 17 (01), 85-89, 2007 | 1 | 2007 |
| Semiconductor device with strained layer LW Chang, YJ Sun, T Yamamoto US Patent 9,831,321, 2017 | | 2017 |
| Experimental demonstration of performance improvement with a strain boost technique tailored for 3-Dimensional structure on nano-scaled bulk pFinFETs TC Lin, YJ Sun, MH Lin, T Yamamoto, SH Yang 2016 International Symposium on VLSI Technology, Systems and Application …, 2016 | | 2016 |
| Electrical Performance of Ta-Based Ohmic Contacts on Undoped AlGaN/AlN/GaN Heterostructures Y Sun, LF Eastman 2006 64th Device Research Conference, 107-108, 2006 | | 2006 |
| Electrical Performance and Physics of Ohmic Contact on Undoped Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistor YJ Sun Cornell University, 2004 | | 2004 |
