| Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions X Perpina, JF Serviere, J Urresti-Ibañez, I Cortes, X Jorda, S Hidalgo, ... IEEE Transactions on Industrial Electronics 58 (7), 2706-2714, 2010 | 59 | 2010 |
| UIS failure mechanism of SiC power MOSFETs A Fayyaz, A Castellazzi, G Romano, M Riccio, A Irace, J Urresti, N Wright 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 58 | 2016 |
| A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs A Fayyaz, G Romano, J Urresti, M Riccio, A Castellazzi, A Irace, N Wright Energies 10 (4), 452, 2017 | 48 | 2017 |
| Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo Microelectronics Reliability 45 (3-4), 493-498, 2005 | 43 | 2005 |
| IGBT module failure analysis in railway applications X Perpiñà, JF Serviere, X Jordà, A Fauquet, S Hidalgo, J Urresti-Ibañez, ... Microelectronics Reliability 48 (8-9), 1427-1431, 2008 | 40 | 2008 |
| Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack F Arith, J Urresti, K Vasilevskiy, S Olsen, N Wright, A O’Neill IEEE Electron Device Letters 39 (4), 564-567, 2018 | 39 | 2018 |
| A numerical study of field plate configurations in RF SOI LDMOS transistors I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo Solid-State Electronics 50 (2), 155-163, 2006 | 39 | 2006 |
| Transient out-of-SOA robustness of SiC power MOSFETs A Castellazzi, A Fayyaz, G Romano, M Riccio, A Irace, J Urresti-Ibanez, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2A-3.1-2A-3.8, 2017 | 30 | 2017 |
| Layout role in failure physics of IGBTs under overloading clamped inductive turnoff X Perpina, I Cortes, J Urresti-Ibanez, X Jorda, J Rebollo IEEE Transactions on Electron Devices 60 (2), 598-605, 2012 | 29 | 2012 |
| Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-Stack J Urresti, F Arith, S Olsen, N Wright, A O’Neill IEEE Transactions on Electron Devices 66 (4), 1710-1716, 2019 | 24 | 2019 |
| Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs A Fayyaz, A Castellazzi, G Romano, M Riccio, A Irace, J Urresti, N Wright 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 24 | 2017 |
| Robustness test and failure analysis of IGBT modules during turn-off J Urresti-Ibañez, A Castellazzi, M Piton, J Rebollo, M Mermet-Guyennet, ... Microelectronics Reliability 47 (9-11), 1725-1729, 2007 | 19 | 2007 |
| Modeling of non-uniform heat generation in LDMOS transistors J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo Solid-state electronics 49 (1), 77-84, 2005 | 17 | 2005 |
| Integrated compact modelling of a planar-gate non-punch-through 3.3 kV-1200A IGBT module for insightful analysis and realistic interpretation of the failure mechanisms A Castellazzi, M Ciappa, W Fichtner, J Urresti-Ibañez, ... Proceedings of the 19th International Symposium on Power Semiconductor …, 2007 | 14 | 2007 |
| Lateral punch-through TVS devices for on-chip protection in low-voltage applications J Urresti, S Hidalgo, D Flores, J Roig, I Cortés, J Rebollo Microelectronics Reliability 45 (7-8), 1181-1186, 2005 | 14 | 2005 |
| Edge termination impact on clamped inductive turn-off failure in high-voltage IGBTs under overcurrent conditions X Perpiñà, I Cortés, J Urresti-Ibañez, X Jordà, J Rebollo, J Millán 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 10 | 2011 |
| Optimisation of very low voltage TVS protection devices J Urresti, S Hidalgo, D Flores, J Roig, J Rebollo, I Mazarredo Microelectronics journal 34 (9), 809-813, 2003 | 10 | 2003 |
| Over-current turn-off failure in high voltage IGBT modules under clamped inductive load X Perpiñà, JF Serviere, X Jorda, S Hidalgo, J Urresti-Ibanez, J Rebollo, ... 2009 13th European Conference on Power Electronics and Applications, 1-10, 2009 | 8 | 2009 |
| Efficiency of SOI-like structures for reducing the thermal resistance in thin-film SOI power LDMOSFETs J Roig, J Urresti, I Cortes, D Flores, S Hidalgo, J Millan IEEE electron device letters 25 (11), 743-745, 2004 | 8 | 2004 |
| Dielectrics in silicon carbide devices: technology and application A O’Neill, O Vavasour, S Russell, F Arith, J Urresti, P Gammon Advancing Silicon Carbide Electronics Technology II: Core Technologies of …, 2020 | 7 | 2020 |
