| MoS2 transistors with 1-nanometer gate lengths SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ... Science 354 (6308), 99-102, 2016 | 1451 | 2016 |
| Field-effect transistors built from all two-dimensional material components T Roy, M Tosun, JS Kang, AB Sachid, SB Desai, M Hettick, CC Hu, ... ACS nano 8 (6), 6259-6264, 2014 | 781 | 2014 |
| High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors M Tosun, S Chuang, H Fang, AB Sachid, M Hettick, Y Lin, Y Zeng, ... ACS nano 8 (5), 4948-4953, 2014 | 343 | 2014 |
| Negative capacitance in short-channel FinFETs externally connected to an epitaxial ferroelectric capacitor AI Khan, K Chatterjee, JP Duarte, Z Lu, A Sachid, S Khandelwal, ... IEEE Electron Device Letters 37 (1), 111-114, 2015 | 253 | 2015 |
| Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ... IEEE Electron Device Letters 39 (2), 300-303, 2017 | 166 | 2017 |
| Monolithic 3D CMOS using layered semiconductors AB Sachid, M Tosun, SB Desai, CY Hsu, DH Lien, SR Madhvapathy, ... Adv. Mater 28 (13), 2547-2554, 2016 | 145 | 2016 |
| Gate fringe-induced barrier lowering in underlap FinFET structures and its optimization AB Sachid, CR Manoj, DK Sharma, VR Rao IEEE Electron Device Letters 29 (1), 128-130, 2007 | 136 | 2007 |
| Insights into the design and optimization of tunnel-FET devices and circuits A Pal, AB Sachid, H Gossner, VR Rao IEEE Transactions on Electron devices 58 (4), 1045-1053, 2011 | 134 | 2011 |
| BSIM-IMG: A compact model for ultrathin-body SOI MOSFETs with back-gate control S Khandelwal, YS Chauhan, DD Lu, S Venugopalan, MAU Karim, ... IEEE Transactions on Electron Devices 59 (8), 2019-2026, 2012 | 116 | 2012 |
| Compact models of negative-capacitance FinFETs: Lumped and distributed charge models JP Duarte, S Khandelwal, AI Khan, A Sachid, YK Lin, HL Chang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2016 | 102 | 2016 |
| Engineering negative differential resistance in NCFETs for analog applications H Agarwal, P Kushwaha, JP Duarte, YK Lin, AB Sachid, MY Kao, ... IEEE Transactions on Electron Devices 65 (5), 2033-2039, 2018 | 101 | 2018 |
| Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density K Chen, D Kiriya, M Hettick, M Tosun, TJ Ha, SR Madhvapathy, S Desai, ... Apl Materials 2 (9), 2014 | 99 | 2014 |
| Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference? AB Sachid, R Francis, MS Baghini, DK Sharma, KH Bach, R Mahnkopf, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 89 | 2008 |
| Semiconductor devices H Gossner, R Rao, A Sachid, A Pal, R Asra US Patent 8,405,121, 2013 | 84 | 2013 |
| FinFET with High-κ Spacers for Improved Drive Current AB Sachid, MC Chen, C Hu IEEE Electron Device Letters 37 (7), 835 - 838, 2016 | 70 | 2016 |
| Denser and more stable SRAM using FinFETs with multiple fin heights AB Sachid, C Hu IEEE Transactions on Electron Devices 59 (8), 2037-2041, 2012 | 56 | 2012 |
| FinFET with encased air-gap spacers for high-performance and low-energy circuits AB Sachid, YM Huang, YJ Chen, CC Chen, DD Lu, MC Chen, C Hu IEEE Electron Device Letters 38 (1), 16-19, 2016 | 54 | 2016 |
| Bulk FinFET With Low- Spacers for Continued Scaling AB Sachid, MC Chen, C Hu IEEE Transactions on Electron Devices 64 (4), 1861-1864, 2017 | 53 | 2017 |
| Extraction of isothermal condition and thermal network in UTBB SOI MOSFETs MA Karim, YS Chauhan, S Venugopalan, AB Sachid, DD Lu, BY Nguyen, ... IEEE Electron Device Letters 33 (9), 1306-1308, 2012 | 53 | 2012 |
| Negative capacitance, n-channel, Si FinFETs: Bi-directional sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect H Zhou, D Kwon, AB Sachid, Y Liao, K Chatterjee, AJ Tan, AK Yadav, ... 2018 IEEE Symposium on VLSI Technology, 53-54, 2018 | 51 | 2018 |
Sujay DesaiPh.D. Student in Electrical Engineering, University of California Berkeley (Past: IIT Bombay)在 eecs.berkeley.edu 的电子邮件经过验证
