| Charge collection and charge sharing in a 130 nm CMOS technology OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ... IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006 | 480 | 2006 |
| Response of advanced bipolar processes to ionizing radiation EW Enlow, RL Pease, W Combs, RD Schrimpf, RN Nowlin IEEE transactions on nuclear science 38 (6), 1342-1351, 1991 | 411 | 1991 |
| Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ... IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994 | 374 | 1994 |
| Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ... IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002 | 293 | 2002 |
| Monte Carlo simulation of single event effects RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ... IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010 | 282 | 2010 |
| Defect generation by hydrogen at the Si-SiO2 interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 87 (16), 165506, 2001 | 237 | 2001 |
| Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ... IEEE Transactions on Nuclear Science 40 (6), 1276-1285, 1993 | 237 | 1993 |
| Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2 ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 89 (28), 285505, 2002 | 231 | 2002 |
| ELDRS in bipolar linear circuits: A review RL Pease, RD Schrimpf, DM Fleetwood 2008 European Conference on Radiation and Its Effects on Components and …, 2008 | 230 | 2008 |
| Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ... IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007 | 228 | 2007 |
| Single event transient pulse widths in digital microcircuits MJ Gadlage, RD Schrimpf, JM Benedetto, PH Eaton, DG Mavis, M Sibley, ... IEEE transactions on nuclear science 51 (6), 3285-3290, 2004 | 221 | 2004 |
| Impact of low-energy proton induced upsets on test methods and rate predictions BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ... IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009 | 220 | 2009 |
| Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ... IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002 | 203 | 2002 |
| The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ... IEEE transactions on nuclear science 52 (6), 2125-2131, 2005 | 198 | 2005 |
| Trends in the total-dose response of modern bipolar transistors RN Nowlin, EW Enlow, RD Schrimpf, WE Combs IEEE Transactions on Nuclear Science 39 (6), 2026-2035, 1992 | 195 | 1992 |
| Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ... IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003 | 192 | 2003 |
| Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf IEEE Transactions on Nuclear Science 43 (6), 2537-2546, 1996 | 192 | 1996 |
| Reactions of hydrogen with Si-SiO2 interfaces ST Pantelides, SN Rashkeev, R Buczko, DM Fleetwood, RD Schrimpf IEEE Transactions on Nuclear Science 47 (6), 2262-2268, 2000 | 184 | 2000 |
| Radiation effects and soft errors in integrated circuits and electronic devices RD Schrimpf, DM Fleetwood World Scientific, 2004 | 183 | 2004 |
| The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 CJ Nicklaw, ZY Lu, DM Fleetwood, RD Schrimpf, ST Pantelides IEEE Transactions on Nuclear Science 49 (6), 2667-2673, 2002 | 183 | 2002 |
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt University在 vanderbilt.edu 的电子邮件经过验证
