| Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger IEEE Transactions on Electron Devices 66 (11), 4604-4616, 2019 | 158 | 2019 |
| Understanding BTI in SiC MOSFETs and its impact on circuit operation K Puschkarsky, H Reisinger, T Aichinger, W Gustin, T Grasser IEEE Transactions on device and materials reliability 18 (2), 144-153, 2018 | 101 | 2018 |
| Investigation of threshold voltage stability of SiC MOSFETs D Peters, T Aichinger, T Basler, G Rescher, K Puschkarsky, H Reisinger 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 88 | 2018 |
| Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger 2018 IEEE International Reliability Physics Symposium (IRPS), 3B. 5-1-3B. 5-10, 2018 | 55 | 2018 |
| Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation K Puschkarsky, H Reisinger, T Aichinger, W Gustin, T Grasser 2017 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2017 | 40 | 2017 |
| A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation P Salmen, MW Feil, K Waschneck, H Reisinger, G Rescher, T Aichinger 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 39 | 2021 |
| Physical modeling of charge trapping in 4H-SiC DMOSFET technologies C Schleich, D Waldhoer, K Waschneck, MW Feil, H Reisinger, T Grasser, ... IEEE Transactions on Electron Devices 68 (8), 4016-4021, 2021 | 33 | 2021 |
| Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental B Ullmann, M Jech, K Puschkarsky, GA Rott, M Waltl, Y Illarionov, ... IEEE Transactions on Electron Devices 66 (1), 232-240, 2018 | 31 | 2018 |
| Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation P Salmen, MW Feil, K Waschneck, H Reisinger, G Rescher, I Voss, ... Microelectronics reliability 135, 114575, 2022 | 26 | 2022 |
| NBTI degradation and recovery in analog circuits: Accurate and efficient circuit-level modeling KU Giering, K Puschkarsky, H Reisinger, G Rzepa, G Rott, R Vollertsen, ... IEEE Transactions on Electron Devices 66 (4), 1662-1668, 2019 | 21 | 2019 |
| Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress T Grasser, M Waltl, K Puschkarsky, B Stampfer, G Rzepa, G Pobegen, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 6A-2.1-6A-2.6, 2017 | 21 | 2017 |
| Towards understanding the physics of gate switching instability in silicon carbide MOSFETs MW Feil, K Waschneck, H Reisinger, J Berens, T Aichinger, P Salmen, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2023 | 20 | 2023 |
| Voltage-dependent activation energy maps for analytic lifetime modeling of NBTI without time extrapolation K Puschkarsky, H Reisinger, C Schluender, W Gustin, T Grasser IEEE Transactions on Electron Devices 65 (11), 4764-4771, 2018 | 17 | 2018 |
| Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors T Grasser, B Stampfer, M Waltl, G Rzepa, K Rupp, F Schanovsky, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 2A. 2-1-2A. 2-10, 2018 | 16 | 2018 |
| The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects B Ullmann, M Jech, S Tyaginov, M Waltl, Y Illarionov, A Grill, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-10.1-XT-10.6, 2017 | 15 | 2017 |
| The impact of interfacial charge trapping on the reproducibility of measurements of silicon carbide MOSFET device parameters MW Feil, A Huerner, K Puschkarsky, C Schleich, T Aichinger, W Gustin, ... Crystals 10 (12), 1143, 2020 | 14 | 2020 |
| An efficient analog compact NBTI model for stress and recovery based on activation energy maps K Puschkarsky, H Reisinger, GA Rott, C Schluender, W Gustin, T Grasser IEEE Transactions on Electron Devices 66 (11), 4623-4630, 2019 | 13 | 2019 |
| Evaluation of advanced MOSFET threshold voltage drift measurement techniques B Ullmann, K Puschkarsky, M Waltl, H Reisinger, T Grasser IEEE Transactions on Device and Materials Reliability 19 (2), 358-362, 2019 | 13 | 2019 |
| Circuit relevant HCS lifetime assessments at single transistors with emulated variable loads C Schlünder, F Proebster, J Berthold, K Puschkarsky, G Georgakos, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2D-2.1-2D-2.7, 2017 | 13 | 2017 |
| On the physical meaning of single-value activation energies for BTI in Si and SiC MOSFET devices MW Feil, K Puschkarsky, W Gustin, H Reisinger, T Grasser IEEE Transactions on Electron Devices 68 (1), 236-243, 2020 | 12 | 2020 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEE在 iue.tuwien.ac.at 的电子邮件经过验证
