| Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs AJ Lelis, R Green, DB Habersat, M El IEEE Transactions on Electron Devices 62 (2), 316-323, 2014 | 441 | 2014 |
| Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ... IEEE transactions on Electron Devices 55 (8), 1835-1840, 2008 | 367 | 2008 |
| Application of reliability test standards to SiC Power MOSFETs R Green, A Lelis, D Habersat 2011 International Reliability Physics Symposium, EX. 2.1-EX. 2.9, 2011 | 97 | 2011 |
| Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs R Green, A Lelis, D Habersat Japanese Journal of Applied Physics 55 (4S), 04EA03, 2016 | 80 | 2016 |
| Temperature-dependence of SiC MOSFET threshold-voltage instability AJ Lelis, DB Habersat, R Green, N Goldsman Materials Science Forum 600, 807-810, 2009 | 58 | 2009 |
| High-temperature reliability of SiC power MOSFETs AJ Lelis, R Green, DB Habersat Materials Science Forum 679, 599-602, 2011 | 54 | 2011 |
| SiC MOSFET reliability and implications for qualification testing AJ Lelis, R Green, DB Habersat 2017 IEEE International Reliability Physics Symposium (IRPS), 2A-4.1-2A-4.4, 2017 | 38 | 2017 |
| Measurement considerations for evaluating BTI effects in SiC MOSFETs DB Habersat, AJ Lelis, R Green Microelectronics Reliability 81, 121-126, 2018 | 37 | 2018 |
| Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module D Urciuoli, R Green, A Lelis, D Ibitayo 2010 IEEE Energy Conversion Congress and Exposition, 3303-3310, 2010 | 36 | 2010 |
| Effect of threshold-voltage instability on SiC power MOSFET high-temperature reliability A Lelis, R Green, D Habersat Ecs Transactions 41 (8), 203, 2011 | 31 | 2011 |
| Effect of threshold-voltage instability on SiC DMOSFET reliability AJ Lelis, R Green, D Habersat, N Goldsman 2008 IEEE International Integrated Reliability Workshop Final Report, 72-76, 2008 | 31 | 2008 |
| Effects of basal plane dislocations on SiC power device reliability RE Stahlbush, NA Mahadik, AJ Lelis, R Green 2018 IEEE International Electron Devices Meeting (IEDM), 19.4. 1-19.4. 4, 2018 | 22 | 2018 |
| Reverse conduction of a 100 A SiC DMOSFET module in high-power applications RA Wood, DP Urciuoli, TE Salem, R Green 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and …, 2010 | 22 | 2010 |
| Key reliability issues for SiC power MOSFETs A Lelis, D Habersat, R Green, E Mooro ECS Transactions 58 (4), 87, 2013 | 21 | 2013 |
| Feasibility of SiC threshold voltage drift characterization for reliability assessment in production environments DB Habersat, R Green, AJ Lelis Materials Science Forum 897, 509-512, 2017 | 11 | 2017 |
| Time dependence of bias-stress induced threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ... 2007 International Semiconductor Device Research Symposium, 1-2, 2007 | 9 | 2007 |
| Effect of dynamic threshold-voltage instability on dynamic on-state resistance in SiC MOSFETs AJ Lelis, DP Urciuoli, ES Schroen, DB Habersat, R Green IEEE Transactions on Electron Devices 69 (10), 5649-5655, 2022 | 8 | 2022 |
| Effect of stress and measurement conditions in determining the reliability of SiC power MOSFETs A Lelis, R Green, M El, D Habersat Ecs Transactions 50 (3), 251, 2013 | 6 | 2013 |
| Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface B McEwen, I Mahaboob, E Rocco, K Hogan, V Meyers, R Green, ... Journal of Electronic Materials 50, 80-84, 2021 | 5 | 2021 |
| Radiation-Induced trapped charging effects in SiC power MOSFETs R Green, AJ Lelis, DP Urciuoli, M Litz, J Carroll Materials Science Forum 778, 533-536, 2014 | 5 | 2014 |
