关注
Baryshnikova Marina
Baryshnikova Marina
R&D engineer, imec
在 imec.be 的电子邮件经过验证
标题
引用次数
引用次数
年份
Nano-ridge engineering of GaSb for the integration of InAs/GaSb heterostructures on 300 mm (001) Si
M Baryshnikova, Y Mols, Y Ishii, R Alcotte, H Han, T Hantschel, O Richard, ...
Crystals 10 (4), 330, 2020
412020
Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer
CI Ozdemir, Y De Koninck, D Yudistira, N Kuznetsova, M Baryshnikova, ...
Journal of Lightwave Technology 39 (16), 5263-5269, 2021
322021
First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering
A Vais, L Witters, Y Mols, AS Hernandez, A Walke, H Yu, M Baryshnikova, ...
2019 IEEE International Electron Devices Meeting (IEDM), 9.1. 1-9.1. 4, 2019
252019
Nano-ridge laser monolithically grown on (001) Si
D Van Thourhout, Y Shi, M Baryshnikova, Y Mols, N Kuznetsova, ...
Semiconductors and Semimetals 101, 283-304, 2019
252019
Unique design approach to realize an O-band laser monolithically integrated on 300mm Si substrate by nano-ridge engineering
D Colucci, M Baryshnikova, Y Shi, Y Mols, M Muneeb, YD Koninck, ...
Optics Express 30 (8), 13510-13521, 2022
202022
Application of an sb surfactant in InGaAs nano-ridge engineering on 300 mm silicon substrates
B Kunert, R Alcotte, Y Mols, M Baryshnikova, N Waldron, N Collaert, ...
Crystal Growth & Design 21 (3), 1657-1665, 2021
132021
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Y De Koninck, C Caer, D Yudistira, M Baryshnikova, H Sar, PY Hsieh, ...
arXiv preprint arXiv:2309.04473, 2023
122023
Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer
Y Shi, M Pantouvaki, J Van Campenhout, D Colucci, M Baryshnikova, ...
Optics Express 29 (10), 14649-14657, 2021
122021
Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates
Y Shi, LC Kreuzer, NC Gerhardt, M Pantouvaki, J Van Campenhout, ...
Journal of Applied Physics 127 (10), 2020
112020
Sequential infiltration synthesis for line edge roughness mitigation of EUV resist
M Baryshnikova, D De Simone, W Knaepen, K Kachel, C BT, S Paolillo, ...
Journal of Photopolymer Science and Technology 30 (6), 667-670, 2017
102017
Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations
H Han, T Hantschel, L Strakos, T Vystavel, M Baryshnikova, Y Mols, ...
Ultramicroscopy 210, 112928, 2020
92020
Monolithic integration of nano-ridge engineered InGaP/GaAs HBTs on 300 mm Si substrate
Y Mols, A Vais, S Yadav, L Witters, K Vondkar, R Alcotte, M Baryshnikova, ...
Materials 14 (19), 5682, 2021
72021
Advanced transistors for high frequency applications
B Parvais, U Peralagu, A Vais, AR Alian, L Witters, Y Mols, A Walke, ...
ECS Transactions 97 (5), 27, 2020
62020
Wafer-level aging of InGaAs/GaAs nano-ridge pin diodes monolithically integrated on silicon
PY Hsieh, A Tsiara, B O’Sullivan, D Yudistira, M Baryshnikova, ...
2022 IEEE International Reliability Physics Symposium (IRPS), 9A. 3-1-9A. 3-9, 2022
42022
0.3 pA Dark current and 0.65 A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm si wafer
CI Ozdemir, Y De Koninck, D Yudistira, N Kuznetsova, M Baryshnikova, ...
2020 European Conference on Optical Communications (ECOC), 1-4, 2020
42020
InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetector epitaxially grown on a 300-mm si wafer
CI Ozdemir, Y De Koninck, N Kuznetsova, M Baryshnikova, ...
2020 IEEE Photonics Conference (IPC), 1-2, 2020
42020
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Y De Koninck, C Caer, D Yudistira, M Baryshnikova, H Sar, S Patra, ...
22023
Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform
Y Kim, D Yudistira, B Kunert, M Baryshnikova, R Alcotte, CI Ozdemir, ...
Photonics Research 10 (6), 1509-1516, 2022
22022
Application and optimization of automated ECCI mapping to the analysis of lowly defective epitaxial films on blanket or patterned wafers
H Han, T Hantschel, P Lagrain, C Porret, R Loo, M Baryshnikova, ...
International Symposium for Testing and Failure Analysis 84215, 211-216, 2021
22021
First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology
A Vais, L Witters, Y Mols, A Sibaja-Hernandez, A Walke, H Yu, ...
22019
系统目前无法执行此操作,请稍后再试。
文章 1–20